Band Gap Narrowing and Widening of ZnO Nanostructures and Doped Materials

• Published in: Nanoscale research letters Vol. 10; no. 1; p. 1034
• Main Authors: Kamarulzaman, Norlida, Kasim, Muhd Firdaus, Rusdi, Roshidah
• Format: Journal Article
• Language: English
• Published: New York Springer US 29.08.2015; Springer Nature B.V
• Subjects: Chemistry and Materials Science; Materials Science; Molecular Medicine; Nano Idea; Nanochemistry; Nanoscale Science and Technology; Nanotechnology; Nanotechnology and Microengineering; Volcano eruptions; Doping; Nanomaterials; Narrowing; ZnO; Band gap; Widening; Microstructure; Energy level; Nanorods
• ISSN: 1931-7573; 1556-276X
• DOI: 10.1186/s11671-015-1034-9

Band gap change in doped ZnO is an observed phenomenon that is very interesting from the fundamental point of view. This work is focused on the preparation of pure and single phase nanostructured ZnO and Cu as well as Mn-doped ZnO for the purpose of understanding the mechanisms of band gap narrowing in the materials. ZnO, Zn 0.99 Cu 0.01 O and Zn 0.99 Mn 0.01 O materials were prepared using a wet chemistry method, and X-ray diffraction (XRD) results showed that all samples were pure and single phase. UV-visible spectroscopy showed that materials in the nanostructured state exhibit band gap widening with respect to their micron state while for the doped compounds exhibited band gap narrowing both in the nano and micron states with respect to the pure ZnO materials. The degree of band gap change was dependent on the doped elements and crystallite size. X-ray photoelectron spectroscopy (XPS) revealed that there were shifts in the valence bands. From both UV-visible and XPS spectroscopy, it was found that the mechanism for band gap narrowing was due to the shifting of the valance band maximum and conduction band minimum of the materials. The mechanisms were different for different samples depending on the type of dopant and dimensional length scales of the crystallites.