Direct Growth of Single Crystalline GaN Nanowires on Indium Tin Oxide-Coated Silica

In this work, we demonstrated the direct growth of GaN nanowires on indium tin oxide (ITO)-coated fused silica substrate. The nanowires were grown catalyst-free using plasma-assisted molecular beam epitaxy (PA-MBE). The effect of growth condition on the morphology and quality of the nanowires is sys...

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Bibliographic Details
Published inNanoscale research letters Vol. 14; no. 1; pp. 45 - 7
Main Authors Prabaswara, Aditya, Min, Jung-Wook, Subedi, Ram Chandra, Tangi, Malleswararao, Holguin-Lerma, Jorge A., Zhao, Chao, Priante, Davide, Ng, Tien Khee, Ooi, Boon S.
Format Journal Article
LanguageEnglish
Published New York Springer US 05.02.2019
Springer Nature B.V
SpringerOpen
Subjects
Atomic force microscopy
Atomic properties
Chemistry and Materials Science
Crystal defects
Crystal growth
Epitaxial growth
Fused silica
Gallium nitride
Gallium nitrides
Indium tin oxide
Indium tin oxides
Low temperature
Materials Science
Microscopy
Molecular beam epitaxy
Molecular Medicine
Morphology
Nano Express
Nanochemistry
Nanoscale Science and Technology
Nanotechnology
Nanotechnology and Microengineering
Nanowires
Optical properties
Photoluminescence
Photons
Silica
Silicon dioxide
Single crystals
Structural analysis
Substrates
Tin
Nanowires
Indium tin oxide
Gallium nitride
Silica
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Summary:In this work, we demonstrated the direct growth of GaN nanowires on indium tin oxide (ITO)-coated fused silica substrate. The nanowires were grown catalyst-free using plasma-assisted molecular beam epitaxy (PA-MBE). The effect of growth condition on the morphology and quality of the nanowires is systematically investigated. Structural characterization indicates that the nanowires grow in the (0001) direction directly on top of the ITO layer perpendicular to the substrate plane. Optical characterization of the nanowires shows that yellow luminescence is absent from the nanowire’s photoluminescence response, attributed to the low number of defects. Conductive atomic force microscopy (C-AFM) measurement on n-doped GaN nanowires shows good conductivity for individual nanowires, which confirms the potential of using this platform for novel device applications. By using a relatively low-temperature growth process, we were able to successfully grow high-quality single-crystal GaN material without the degradation of the underlying ITO layer.
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ISSN:1931-7573
1556-276X
DOI:10.1186/s11671-019-2870-9