Charge carrier injection and transport engineering in two-dimensional transition metal dichalcogenides

Ever since two dimensional-transition (2D) metal dichalcogenides (TMDs) were discovered, their fascinating electronic properties have attracted a great deal of attention for harnessing them as critical components in novel electronic devices. 2D-TMDs endowed with an atomically thin structure, danglin...

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Published inChemical science (Cambridge) Vol. 9; no. 4; pp. 7727 - 7745
Main Authors Durán Retamal, José Ramón, Periyanagounder, Dharmaraj, Ke, Jr-Jian, Tsai, Meng-Lin, He, Jr-Hau
Format Journal Article
LanguageEnglish
Published England Royal Society of Chemistry 28.10.2018
Subjects
Carrier density
Carrier injection
Carrier traps
Chalcogenides
Charge injection
Charge materials
Charge transfer
Charge transport
Chemistry
Critical components
Current carriers
Electronic devices
Energy gap
Engineering
Fermi level
Insulators
Integrity
Interlayers
Ionic liquids
Nanoelectronics
Nanotechnology devices
Organic chemistry
Power consumption
Substrates
Superconductivity
Transition metal compounds
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Summary:Ever since two dimensional-transition (2D) metal dichalcogenides (TMDs) were discovered, their fascinating electronic properties have attracted a great deal of attention for harnessing them as critical components in novel electronic devices. 2D-TMDs endowed with an atomically thin structure, dangling bond-free nature, electrostatic integrity, and tunable wide band gaps enable low power consumption, low leakage, ambipolar transport, high mobility, superconductivity, robustness against short channel effects and tunneling in highly scaled devices. However, the progress of 2D-TMDs has been hampered by severe charge transport issues arising from undesired phenomena occurring at the surfaces and interfaces. Therefore, this review provides three distinct engineering strategies embodied with distinct innovative approaches to optimize both carrier injection and transport. First, contact engineering involves 2D-metal contacts and tunneling interlayers to overcome metal-induced interface states and the Fermi level pinning effect caused by low vacancy energy formation. Second, dielectric engineering covers high- k dielectrics, ionic liquids or 2D-insulators to screen scattering centers caused by carrier traps, imperfections and rough substrates, to finely tune the Fermi level across the band gap, and to provide dangling bond-free media. Third, material engineering focuses on charge transfer via substitutional, chemical and plasma doping to precisely modulate the carrier concentration and to passivate defects while preserving material integrity. Finally, we provide an outlook of the conceptual and technical achievements in 2D-TMDs to give a prospective view of the future development of highly scaled nanoelectronic devices. This review intertwines current engineering strategies tailoring the carrier injection and carrier transport of two-dimensional transition metal dichalcogenides toward efficient electronic devices.
Bibliography:Dharmaraj Periyanagounder is working as a visiting student in the Electrical Engineering Department at the Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division of the King Abdullah University of Science and Technology (KAUST). Dharma's research interests are the device physics of 2D materials and their heterostructures for technologically useful electronic, optoelectronic and thermoelectric applications. He is now extensively involved in the micro/nanofabrication of 2D material-based devices by high resolution e-beam lithography.
José Ramón Durán Retamal received his B.S. (2007) from the Telecommunication Engineering School, Technical University of Madrid, M.S. (2010) from Electrical Engineering Department and Ph.D. (2014) from the Graduate Institute of Photonics and Optoelectronics at the National Taiwan University. Currently, he is a postdoctoral fellow at the Computer, Electrical and Mathematical Sciences and Engineering Division of King Abdullah University of Science and Technology (KAUST). His past research activities include metal oxide nanostructure based electronic devices including transistors, photodetectors, and memories. More recently, his research focuses on elucidating and improving the carrier transport through 2D-TMD lateral heterojunctions.
Meng-Lin Tsai received his B.S. degree from National Tsing Hua University, Hsinchu, Taiwan. He is currently with the Department of Electrical Engineering, and the Graduate Institute of Photonics and Optoelectronics, National Taiwan University, Taipei, Taiwan. Currently, he is working at Taiwan Semiconductor Manufacturing Company (TSMC).
Dr. Jr-Hau He is an Associate Professor of Electrical Engineering program at King Abdullah University of Science & Technology (KAUST). His breakthrough research in 2D materials/electronics and photoelectrochemical water splitting has been highlighted over 50 times by various scientific magazines such as Nature, Nature Materials, IEEE SPECTRUM, EE Times, Semiconductor Today, Materials Today, Chemical & Engineering News, and Nano Today. He participates actively in activities and services in scientific professional societies. He is a Fellow of RSC and SPIE, and a senior member of IEEE and OSA.
Jr-Jian Ke received his B.S. (2007) in electrical engineering from the National University of Kaohsiung, Kaohsiung, Taiwan, and his M.S. (2009) and Ph. D (2016) degrees from the Graduate Institute of Photonics and Optoelectronics, National Taiwan University, Taipei, Taiwan. His past research activities include the transport mechanism of nanowires and metal-semiconductor interfaces. He is now working on the fabrication and transport modeling of resistive random-access memory devices and their applications.
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ISSN:2041-6520
2041-6539
DOI:10.1039/c8sc02609b