EUV Patterning Strategy compensating EUV Shot Noise

It is reported that EUV shot noise has become fundamental issues to deteriorate LWR (Line Width Roughness) and CDU (CD Uniformity). But progress of EUV source power is delayed and not sufficient, we need to develop EUV patterning technology to overcome EUV shot noise. Currently there are four techno...

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Bibliographic Details
Published inJournal of Photopolymer Science and Technology Vol. 26; no. 5; pp. 595 - 598
Main Authors Oh, Changil, Kim, Jiil, Heo, Junggun, Seo, Hyungsuk, An, Kwanggu, Bok, Cheolkyu, Kim, Myoungsoo, Park, Sungki
Format Journal Article
LanguageEnglish
Published Hiratsuka The Society of Photopolymer Science and Technology(SPST) 01.01.2013
Japan Science and Technology Agency
Subjects
Blend DSA Rectification
CDU
EUV
EUV NTD
LWR
Mitigation Process
Resist
Shot Noise
Source Power
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Summary:It is reported that EUV shot noise has become fundamental issues to deteriorate LWR (Line Width Roughness) and CDU (CD Uniformity). But progress of EUV source power is delayed and not sufficient, we need to develop EUV patterning technology to overcome EUV shot noise. Currently there are four technological strategies and we are investigating them. ; These are (1) resist upgrade, (2) additional LWR / CDU mitigation process, (3) EUV NTD (Negative Tone Development) and finally (4) blend DSA (Directed Self Assembly) rectification. Resist upgrade and additional LWR / CDU mitigation process is matured more or less, so we are using some effects from them already. But EUV NTD and blend DSA rectification is new and potential technology which is introduced recently, so we expect these will become break-through technologies against EUV shot noise.
ISSN:0914-9244
1349-6336
DOI:10.2494/photopolymer.26.595