Use of Stress To Produce Highly Oriented Tetragonal Lead Zirconate Titanate (PZT 40/60) Thin Films and Resulting Electrical Properties

• Published in: Journal of the American Ceramic Society Vol. 87; no. 8; pp. 1459 - 1465
• Main Authors: Brennecka, Geoff L., Huebner, Wayne, Tuttle, Bruce A., Clem, Paul G.
• Format: Journal Article
• Language: English
• Published: Westerville, Ohio American Ceramics Society 01.08.2004; Blackwell; Wiley Subscription Services, Inc
• Subjects: Ceramics; Condensed matter: electronic structure, electrical, magnetic, and optical properties; Condensed matter: structure, mechanical and thermal properties; Cross-disciplinary physics: materials science; rheology; Dielectric properties; Dielectric, piezoelectric, ferroelectric and antiferroelectric materials; Dielectrics, piezoelectrics, and ferroelectrics and their properties; Electrical properties of specific thin films; Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures; Exact sciences and technology; Lead; lead zirconate titanate; Liquid phase epitaxy; deposition from liquid phases (melts, solutions, and surface layers on liquids); Materials science; Methods of deposition of films and coatings; film growth and epitaxy; Niobates, titanates, tantalates, pzt ceramics, etc; Other inorganic semiconductors; Physics; stress; Stress analysis; Structure and morphology; thickness; Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties); Thin film structure and morphology; Thin films; Inorganic compounds; Crystal orientation; Electrical properties; Lead titanates; Dielectric properties; Titanates; PZT; Experimental study; Ferroelectric properties; Fabrication property relation; Preferred orientation; Lead zirconates; Substrates; Thin films; Ferroelectric materials; Zirconates; Crystal growth from solutions; Stress effects; Fabrication structure relation; Lead Titanates Zirconates; Permittivity; Hysteresis
• ISSN: 0002-7820; 1551-2916
• DOI: 10.1111/j.1551-2916.2004.01459.x

Thin films of Pb(Zr0.4TiO.6)O3 produced by chemical solution deposition were used to study the effects of stress from different platinized single‐crystal substrates on film orientation and resulting electrical properties. Films deposited on MgO preferred a (001) orientation due to compressive stress on the film during cooling through the Curie temperature (TC). Films on Al2O3 were under minimal stress at TC, resulting in a mixture of orientations. Those on Si preferred a (111) orientation due to templating from the bottom electrode. Films oriented in the 〈001〉 direction demonstrated lower dielectric constants and higher Pr and −d31 values than (111) films.