Colossal angular magnetoresistance in ferrimagnetic nodal-line semiconductors

Efficient magnetic control of electronic conduction is at the heart of spintronic functionality for memory and logic applications . Magnets with topological band crossings serve as a good material platform for such control, because their topological band degeneracy can be readily tuned by spin confi...

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Published inNature (London) Vol. 599; no. 7886; pp. 576 - 581
Main Authors Seo, Junho, De, Chandan, Ha, Hyunsoo, Lee, Ji Eun, Park, Sungyu, Park, Joonbum, Skourski, Yurii, Choi, Eun Sang, Kim, Bongjae, Cho, Gil Young, Yeom, Han Woong, Cheong, Sang-Wook, Kim, Jae Hoon, Yang, Bohm-Jung, Kim, Kyoo, Kim, Jun Sung
Format Journal Article
LanguageEnglish
Published England Nature Publishing Group 25.11.2021
Subjects
Electromagnetism
Electron spin
Electronics industry
Ferrimagnets
Insulators
Magnetic control
Magnetic fields
Magnetic properties
Magnetic semiconductors
Magnetism
Magnetoresistance
Magnetoresistivity
Magnets
Materials research
Metal-insulator transition
Molecular orbitals
Semiconductors
Symmetry
Topology
South Korea
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Summary:Efficient magnetic control of electronic conduction is at the heart of spintronic functionality for memory and logic applications . Magnets with topological band crossings serve as a good material platform for such control, because their topological band degeneracy can be readily tuned by spin configurations, dramatically modulating electronic conduction . Here we propose that the topological nodal-line degeneracy of spin-polarized bands in magnetic semiconductors induces an extremely large angular response of magnetotransport. Taking a layered ferrimagnet, Mn Si Te , and its derived compounds as a model system, we show that the topological band degeneracy, driven by chiral molecular orbital states, is lifted depending on spin orientation, which leads to a metal-insulator transition in the same ferrimagnetic phase. The resulting variation of angular magnetoresistance with rotating magnetization exceeds a trillion per cent per radian, which we call colossal angular magnetoresistance. Our findings demonstrate that magnetic nodal-line semiconductors are a promising platform for realizing extremely sensitive spin- and orbital-dependent functionalities.
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ISSN:0028-0836
1476-4687
DOI:10.1038/s41586-021-04028-7