Ab initio investigation of nonlinear optical, electronic, and thermodynamic properties of BEDT-TTF molecule: doping with boron

In this study, the RHF, B3LYP and wB97XD methods with cc-pVDZ basis set have been used to investigate the influence of carbon atoms substitution with boron atoms on the non-linear optical, electronic, optoelectronic and thermodynamic properties of BEDT-TTF (C10H8S8). The results show that the undope...

Full description

Saved in:
Bibliographic Details
Published inHeliyon Vol. 7; no. 7; p. e07461
Main Authors Olinga Mbala, G.F., Ottou Abe, M.T., Ntieche, Z., Ejuh, G.W., Ndjaka, J.M.B.
Format Journal Article
LanguageEnglish
Published England Elsevier Ltd 01.07.2021
Elsevier
Subjects
Online AccessGet full text

Cover

Loading…
More Information
Summary:In this study, the RHF, B3LYP and wB97XD methods with cc-pVDZ basis set have been used to investigate the influence of carbon atoms substitution with boron atoms on the non-linear optical, electronic, optoelectronic and thermodynamic properties of BEDT-TTF (C10H8S8). The results show that the undoped molecule denoted BEDT-TTF or ET (Eg = 3.88 eV) and its derivatives are semi-conductors materials. However, doping C10H8S8 with both 3B and 2B, creating a strong donor-acceptor system and considerably improves its energies gap (Egap). The Eg values of these doped molecules are between 2.2 and 2.39 eV less than 3 eV, which makes more interesting electronic properties. The nonlinear optical parameters such as dipole moment (μ), average polarizability ˂α˃ and first-order hyperpolarizability (βmol) have been calculated and compared with the corresponding values of Urea used as prototypical material to study the NLO properties of the compound. These values obtained indicate that these materials exhibit good nonlinear optical properties. Moreover, we have also computed the chemical softness (ς), ionization potential (IP), electron affinity (AE), global hardness (η), refractive index (n), dielectric constant (ε), electric field (E) and electric susceptibility (χ), total electronic energy (Eo), enthalpy H, entropy S. These results indicate that these new materials doped with boron are promising candidates for the construction of optoelectronics and photonic devices. BEDT-TTF, Hyperpolarizability, Nonlinear optical properties, Doping, Optoelectronic, NBO.
Bibliography:ObjectType-Article-1
SourceType-Scholarly Journals-1
ObjectType-Feature-2
content type line 23
ISSN:2405-8440
2405-8440
DOI:10.1016/j.heliyon.2021.e07461