Formation of large-grain-sized BaSi2 epitaxial layers grown on Si(111) by molecular beam epitaxy
BaSi2 epitaxial films were grown on Si(111) substrates by a two-step growth method including reactive deposition epitaxy (RDE) and molecular beam epitaxy (MBE). To enlarge the grain size of BaSi2, the Ba deposition rate and duration were varied from 0.25 to 1.0nm/min and from 5 to 120min during RDE,...
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Published in | Journal of crystal growth Vol. 378; pp. 193 - 197 |
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Main Authors | , , , , , , , |
Format | Journal Article Conference Proceeding |
Language | English |
Published |
Amsterdam
Elsevier B.V
01.09.2013
Elsevier |
Subjects | |
Online Access | Get full text |
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Summary: | BaSi2 epitaxial films were grown on Si(111) substrates by a two-step growth method including reactive deposition epitaxy (RDE) and molecular beam epitaxy (MBE). To enlarge the grain size of BaSi2, the Ba deposition rate and duration were varied from 0.25 to 1.0nm/min and from 5 to 120min during RDE, respectively. The effect of post-annealing was also investigated at 760°C for 10min. Plan-view transmission electron micrographs indicated that the grain size in the MBE-grown BaSi2 was significantly increased up to approximately 4.0μm, which is much larger than 0.2μm, reported previously.
► BaSi2 films were epitaxially grown on Si(111). ► Growth condition for BaSi2 template layers was optimized. ► Grain size of BaSi2 epitaxial layers exceeded 4μm. |
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Bibliography: | ObjectType-Article-2 SourceType-Scholarly Journals-1 ObjectType-Feature-1 content type line 23 |
ISSN: | 0022-0248 1873-5002 |
DOI: | 10.1016/j.jcrysgro.2012.12.176 |