Formation of large-grain-sized BaSi2 epitaxial layers grown on Si(111) by molecular beam epitaxy

• Published in: Journal of crystal growth Vol. 378; pp. 193 - 197
• Main Authors: Baba, M., Toh, K., Toko, K., Hara, K.O., Usami, N., Saito, N., Yoshizawa, N., Suemasu, T.
• Format: Journal Article Conference Proceeding
• Language: English
• Published: Amsterdam Elsevier B.V 01.09.2013; Elsevier
• Subjects: A1. Large grain; A3. MBE; Applied sciences; B1. Semiconducting silicides; B2. BaSi2; B3. Solar cell; Barium compounds; Cross-disciplinary physics: materials science; rheology; Energy; Exact sciences and technology; Materials science; Methods of crystal growth; physics of crystal growth; Methods of deposition of films and coatings; film growth and epitaxy; Molecular, atomic, ion, and chemical beam epitaxy; Natural energy; Photovoltaic conversion; Physics; Solar cells. Photoelectrochemical cells; Solar energy; Theory and models of crystal growth; physics of crystal growth, crystal morphology and orientation; A3. MBE; A1. Large grain; B2. BaSi2; B1. Semiconducting silicides; B3. Solar cell; Solar cells; Grain size; Barium; Annealing; Epitaxial layers; Semiconductor materials; Deposition rate; Barium silicide; Thin films; B2. BaSi; Transmission electron microscopy; Growth mechanism; Molecular beam epitaxy
• ISSN: 0022-0248; 1873-5002
• DOI: 10.1016/j.jcrysgro.2012.12.176

BaSi2 epitaxial films were grown on Si(111) substrates by a two-step growth method including reactive deposition epitaxy (RDE) and molecular beam epitaxy (MBE). To enlarge the grain size of BaSi2, the Ba deposition rate and duration were varied from 0.25 to 1.0nm/min and from 5 to 120min during RDE, respectively. The effect of post-annealing was also investigated at 760°C for 10min. Plan-view transmission electron micrographs indicated that the grain size in the MBE-grown BaSi2 was significantly increased up to approximately 4.0μm, which is much larger than 0.2μm, reported previously. ► BaSi2 films were epitaxially grown on Si(111). ► Growth condition for BaSi2 template layers was optimized. ► Grain size of BaSi2 epitaxial layers exceeded 4μm.