Update of Development Progress of the High Power LPP-EUV Light Source Using a Magnetic Field

Gigaphoton Inc. has been developing a CO2-Sn-LPP (LPP: Laser Produced Plasma) extreme ultraviolet (EUV) light source system for high-volume manufacturing (HVM) semiconductor lithography. Key components of the source include a high-power CO2 laser with 15 ns pulse duration and 100 kHz repetition freq...

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Bibliographic Details
Published inJournal of Photopolymer Science and Technology Vol. 33; no. 1; pp. 37 - 44
Main Authors Kouge, Kouichiro, Nagai, Shinji, Hori, Tsukasa, Ueno, Yoshifumi, Yanagida, Tatsuya, Miyao, Kenichi, Hayashi, Hideyuki, Watanabe, Yukio, Abe, Tamotsu, Nakarai, Hiroaki, Saito, Takashi, Mizoguchi, Hakaru
Format Journal Article
LanguageEnglish
Published Hiratsuka The Society of Photopolymer Science and Technology(SPST) 01.07.2020
Japan Science and Technology Agency
Subjects
Carbon dioxide
Carbon dioxide lasers
Debris mitigation
EUV light source
EUV lithography
Laser produced plasma
Lasers
Light sources
Magnetic fields
Pulse duration
Upgrading
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Summary:Gigaphoton Inc. has been developing a CO2-Sn-LPP (LPP: Laser Produced Plasma) extreme ultraviolet (EUV) light source system for high-volume manufacturing (HVM) semiconductor lithography. Key components of the source include a high-power CO2 laser with 15 ns pulse duration and 100 kHz repetition frequency, a solid-state pre-pulse laser with 10 ps pulse duration, a high speed Sn-droplet generator, a high-speed and high accuracy shooting system, and a magnetic field debris mitigation system. To achieve an in-band power of 330 W with long collector mirror lifetime and stable output, we improved the performance of key system components. We achieved an in-band power of 250 W under DC operation and demonstrated a power scalability up to 330 W. This paper presents the key technology update of our EUV light source.
ISSN:0914-9244
1349-6336
DOI:10.2494/photopolymer.33.37