In situ observation of composition profiles in the solution by X-ray penetration method

• Published in: Journal of crystal growth Vol. 310; no. 7; pp. 1487 - 1492
• Main Authors: Hayakawa, Yasuhiro, Hikida, Takuya, Morii, Hisashi, Konno, Akiko, Chen, Chung-Hao, Arafune, Kouji, Kawai, Hideki, Koyama, Tadanobu, Momose, Yoshimi, Ozawa, Tetsuo, Aoki, Toru
• Format: Journal Article
• Language: English
• Published: Amsterdam Elsevier B.V 01.04.2008; Elsevier
• Subjects: A1. Mass transfer; A2. Growth from solutions; B1. Gallium compounds; B2. Semiconducting III–V materials; Condensed matter: electronic structure, electrical, magnetic, and optical properties; Condensed matter: structure, mechanical and thermal properties; Cross-disciplinary physics: materials science; rheology; Equations of state, phase equilibria, and phase transitions; Exact sciences and technology; Growth from solutions; Materials science; Methods of crystal growth; physics of crystal growth; Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation; Other interactions of matter with particles and radiation; Physics; Solubility, segregation, and mixing; phase separation; Theory and models of crystal growth; physics of crystal growth, crystal morphology and orientation; X-ray scattering; 8.10.Mx; B2. Semiconducting III–V materials; A1. Mass transfer; 78.70.Ck; A2. Growth from solutions; B1. Gallium compounds; 81.10.−h; 81.10.Dn; Crystal growth; Antimony; Calibration; Indium; Mass transfer; Time dependence; 78.70.Ck; 81.10.-h; 81.10.Dn; 8.10.Mx; Electron microprobe analysis; II-VI semiconductors; Cadmium tellurides; Growth mechanism; Diffusion process; Crystal growth from solutions; Diffusion coefficient; Gallium compounds; Growth from solution; Al. Mass transfer; A2. Growth from solutions; Bl. Gallium compounds; B2. Semiconducting III-V materials; Concentration distribution; III-V semiconductors
• ISSN: 0022-0248; 1873-5002
• DOI: 10.1016/j.jcrysgro.2007.12.010

The X-ray penetration intensity during the diffusion process of NH 4Br into H 2O was measured by a CdTe line sensor as a function of time and it was converted to the NH 4Br composition using a calibration line. The diffusion coefficient of NH 4Br into H 2O was estimated to be 2.2×10 −5 cm 2/s by comparing the calculated results. The method was applied to the growth of InGaSb from the In–Ga–Sb solution. The indium composition profiles in the solution were measured and growth of InGaSb from the In–Ga–Sb solution was observed from the change of X-ray intensity. The growth region of InGaSb crystal was confirmed by the electron probe microanalysis. It was demonstrated that the X-ray penetration method was a powerful method to measure the composition profiles in the solution.