Microwave transformers, inductors and transmission lines implemented in an Si/SiGe HBT process

• Published in: IEEE transactions on microwave theory and techniques Vol. 49; no. 8; pp. 1507 - 1510
• Main Authors: Laney, D.C., Larson, L.E., Chan, P., Malinowski, J., Harame, D., Subbanna, S., Volant, R., Case, M.
• Format: Journal Article
• Language: English
• Published: New York IEEE 01.08.2001; The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
• Subjects: Dielectrics; Gain; Germanium silicon alloys; Inductors; Metallization; Microstrip; Microwaves; Noise levels; Planar transmission lines; Polyimides; Silicon; Silicon germanides; Silicon germanium; Transformers; Transmission lines
• ISSN: 0018-9480; 1557-9670
• DOI: 10.1109/22.939934

Experimental results are presented on microwave inductors, transformers, and transmission lines fabricated in an Si/SiGe heterojunction-bipolar-transistor process with standard metallization and a thick polyimide dielectric. Microstrip transmission lines with characteristic impedances from 44 to 73 /spl Omega/, Q's from 10 to 14, and insertion losses from 0.11 to 0.16 dB/mm at 10 GHz are presented. Conventional planar inductors with inductances from 0.5 to 15 nH and with peak Q's up to 22 are presented. Lateral transformers with a maximum available gain of better than -5 dB and a measured coupling coefficient (k) of 0.6 at 5.5 GHz and 0.4 up to 12.5 GHz are also discussed.