Control of thickness uniformity and grain size in graphene films for transparent conductive electrodes

• Published in: Nanotechnology Vol. 23; no. 3; pp. 035603 - 1-8
• Main Authors: Wu, Wei, Yu, Qingkai, Peng, Peng, Liu, Zhihong, Bao, Jiming, Pei, Shin-Shem
• Format: Journal Article
• Language: English
• Published: England IOP Publishing 27.01.2012
• Subjects: Chemical vapor deposition; Copper; Electrodes; Grain size; Graphene; Nanotechnology; Pressure; Variability
• ISSN: 0957-4484; 1361-6528
• DOI: 10.1088/0957-4484/23/3/035603

Large-scale and transferable graphene films grown on metal substrates by chemical vapor deposition (CVD) still hold great promise for future nanotechnology. To realize the promise, one of the key issues is to further improve the quality of graphene, e.g., uniform thickness, large grain size, and low defects. Here we grow graphene films on Cu foils by CVD at ambient pressure, and study the graphene nucleation and growth processes under different concentrations of carbon precursor. On the basis of the results, we develop a two-step ambient pressure CVD process to synthesize continuous single-layer graphene films with large grain size (up to hundreds of square micrometers). Scanning electron microscopy and Raman spectroscopy characterizations confirm the film thickness and uniformity. The transferred graphene films on cover glass slips show high electrical conductivity and high optical transmittance that make them suitable as transparent conductive electrodes. The growth mechanism of CVD graphene on Cu is also discussed, and a growth model has been proposed. Our results provide important guidance toward the synthesis of high quality uniform graphene films, and could offer a great driving force for graphene based applications.