Doping of free-standing zinc-blende GaN layers grown by molecular beam epitaxy

• Published in: Journal of crystal growth Vol. 403; pp. 43 - 47
• Main Authors: Novikov, S.V., Powell, R.E. L., Staddon, C.R., Kent, A.J., Foxon, C.T.
• Format: Journal Article Conference Proceeding
• Language: English
• Published: Amsterdam Elsevier B.V 01.10.2014; Elsevier
• Subjects: A1. Substrates; A3. Molecular beam epitaxy; B1. Nitrides; B2. Semiconducting III–V materials; Cross-disciplinary physics: materials science; rheology; Crystal growth; Doping; Exact sciences and technology; Gallium nitrides; Magnesium; Materials science; Methods of crystal growth; physics of crystal growth; Methods of deposition of films and coatings; film growth and epitaxy; Molecular beam epitaxy; Molecular, atomic, ion, and chemical beam epitaxy; Physics; Secondary ion mass spectrometry; Silicon; Stability; Theory and models of crystal growth; physics of crystal growth, crystal morphology and orientation; A3. Molecular beam epitaxy; B1. Nitrides; B2. Semiconducting III–V materials; A1. Substrates; Magnesium additions; Doping; Plasma assisted processing; Secondary ion mass spectrometry; Phosphorus additions; Silicon additions; III-V compound; Zinc; B2. Semiconducting III-V materials; Nitrides; Growth mechanism; Molecular beam epitaxy; Nitrogen additions; III-V semiconductors
• ISSN: 0022-0248; 1873-5002
• DOI: 10.1016/j.jcrysgro.2014.06.014

Currently there is high level of interest in developing of vertical device structures based on the group III nitrides. We have studied n- and p-doping of free-standing zinc-blende GaN grown by plasma-assisted molecular beam epitaxy (PA-MBE). Si was used as the n-dopant and Mg as the p-dopant for zinc-blende GaN. Controllable levels of doping with Si and Mg in free-standing zinc-blende GaN have been achieved by PA-MBE. The Si and Mg doping depth uniformity through the zinc-blende GaN layers have been confirmed by secondary ion mass spectrometry (SIMS). Controllable Si and Mg doping makes PA-MBE a promising method for the growth of conducting group III-nitrides bulk crystals. •We have studied n- and p-doping of free-standing zinc-blende GaN grown by PA-MBE.•Si was used as the n-dopant and Mg as the p-dopant for zinc-blende GaN.•Controllable levels of doping in free-standing zinc-blende GaN have been achieved.•The Si and Mg doping depth uniformity have been confirmed by SIMS.