High-fidelity qutrit entangling gates for superconducting circuits

Ternary quantum information processing in superconducting devices poses a promising alternative to its more popular binary counterpart through larger, more connected computational spaces and proposed advantages in quantum simulation and error correction. Although generally operated as qubits, transm...

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Published inNature communications Vol. 13; no. 1; p. 7481
Main Authors Goss, Noah, Morvan, Alexis, Marinelli, Brian, Mitchell, Bradley K, Nguyen, Long B, Naik, Ravi K, Chen, Larry, Jünger, Christian, Kreikebaum, John Mark, Santiago, David I, Wallman, Joel J, Siddiqi, Irfan
Format Journal Article
LanguageEnglish
Published England Nature Publishing Group 05.12.2022
Nature Publishing Group UK
Nature Portfolio
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Summary:Ternary quantum information processing in superconducting devices poses a promising alternative to its more popular binary counterpart through larger, more connected computational spaces and proposed advantages in quantum simulation and error correction. Although generally operated as qubits, transmons have readily addressable higher levels, making them natural candidates for operation as quantum three-level systems (qutrits). Recent works in transmon devices have realized high fidelity single qutrit operation. Nonetheless, effectively engineering a high-fidelity two-qutrit entanglement remains a central challenge for realizing qutrit processing in a transmon device. In this work, we apply the differential AC Stark shift to implement a flexible, microwave-activated, and dynamic cross-Kerr entanglement between two fixed-frequency transmon qutrits, expanding on work performed for the ZZ interaction with transmon qubits. We then use this interaction to engineer efficient, high-fidelity qutrit CZ and CZ gates, with estimated process fidelities of 97.3(1)% and 95.2(3)% respectively, a significant step forward for operating qutrits on a multi-transmon device.
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USDOE Office of Science (SC), Advanced Scientific Computing Research (ASCR)
AC02-05CH11231
ISSN:2041-1723
2041-1723
DOI:10.1038/s41467-022-34851-z