Concentration of point defects in 4H-SiC characterized by a magnetic measurement

A magnetic method is presented to characterize the concentration of point defects in silicon carbide. In this method, the concentration of common charged point defects, which is related to the density of paramagnetic centers, is determined by fitting the paramagnetic component of the specimen to the...

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Bibliographic Details
Published inAIP advances Vol. 6; no. 9; pp. 095201 - 095201-6
Main Authors Peng, B., Jia, R. X., Wang, Y. T., Dong, L. P., Hu, J. C., Zhang, Y. M.
Format Journal Article
LanguageEnglish
Published Melville American Institute of Physics 01.09.2016
AIP Publishing LLC
Subjects
ALUMINIUM
ALUMINIUM IONS
Aluminum
BRILLOUIN ZONES
COMPUTERIZED SIMULATION
CONCENTRATION RATIO
CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY
DENSITY
DOPPLER BROADENING
Electron paramagnetic resonance
Electron spin
ELECTRON SPIN RESONANCE
First principles
ION IMPLANTATION
LANDE FACTOR
LIFETIME
Magnetic measurement
Magnetic methods
MAGNETIC MOMENTS
PARAMAGNETISM
Parameters
POINT DEFECTS
Positron lifetime spectroscopy
POSITRONS
SILICON
Silicon carbide
SILICON CARBIDES
SPECTRA
SPECTROSCOPY
Spectrum analysis
SPIN
Spin resonance
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Summary:A magnetic method is presented to characterize the concentration of point defects in silicon carbide. In this method, the concentration of common charged point defects, which is related to the density of paramagnetic centers, is determined by fitting the paramagnetic component of the specimen to the Brillouin function. Several parameters in the Brillouin function can be measured such as: the g-factor can be obtained from electron spin resonance spectroscopy, and the magnetic moment of paramagnetic centers can be obtained from positron lifetime spectroscopy combined with a first-principles calculation. To evaluate the characterization method, silicon carbide specimens with different concentrations of point defects are prepared with aluminum ion implantation. The fitting results of the densities of paramagnetic centers for the implanted doses of 1 × 1014 cm−2, 1 × 1015 cm−2 and 1 × 1016 cm−2 are 6.52 × 1014/g, 1.14 × 1015/g and 9.45 × 1014/g, respectively. The same trends are also observed for the S-parameters in the Doppler broadening spectra. It is shown that this method is an accurate and convenient way to obtain the concentration of point defects in 4H-SiC.
ISSN:2158-3226
2158-3226
DOI:10.1063/1.4962545