Blocking of indium incorporation by antimony in III–V-Sb nanostructures
The addition of antimony to III-V nanostructures is expected to give greater freedom in bandgap engineering for device applications. One of the main challenges to overcome is the effect of indium and antimony surface segregation. Using several very high resolution analysis techniques we clearly demo...
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Published in | Nanotechnology Vol. 21; no. 14; p. 145606 |
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Main Authors | , , , , , , , , , |
Format | Journal Article |
Language | English |
Published |
England
IOP Publishing
09.04.2010
Institute of Physics |
Series | Nanotechnology |
Subjects | |
Online Access | Get full text |
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Summary: | The addition of antimony to III-V nanostructures is expected to give greater freedom in bandgap engineering for device applications. One of the main challenges to overcome is the effect of indium and antimony surface segregation. Using several very high resolution analysis techniques we clearly demonstrate blocking of indium incorporation by antimony. Furthermore, indium incorporation resumes when the antimony concentration drops below a critical level. This leads to major differences between nominal and actual structures. |
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Bibliography: | ObjectType-Article-2 SourceType-Scholarly Journals-1 ObjectType-Feature-1 content type line 23 |
ISSN: | 0957-4484 1361-6528 |
DOI: | 10.1088/0957-4484/21/14/145606 |