Blocking of indium incorporation by antimony in III–V-Sb nanostructures

The addition of antimony to III-V nanostructures is expected to give greater freedom in bandgap engineering for device applications. One of the main challenges to overcome is the effect of indium and antimony surface segregation. Using several very high resolution analysis techniques we clearly demo...

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Bibliographic Details
Published inNanotechnology Vol. 21; no. 14; p. 145606
Main Authors Sanchez, A M, Beltran, A M, Beanland, R, Ben, T, Gass, M H, de la Peña, F, Walls, M, Taboada, A G, Ripalda, J M, Molina, S I
Format Journal Article
LanguageEnglish
Published England IOP Publishing 09.04.2010
Institute of Physics
SeriesNanotechnology
Subjects
Antimony
Astrophysics
Chemical Sciences
Condensed Matter
Devices
Earth Sciences
Geophysics
High resolution
Indium
Material chemistry
Materials Science
Nanocomposites
Nanomaterials
Nanostructure
Nanotechnology
Physics
Sciences of the Universe
Segregations
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Summary:The addition of antimony to III-V nanostructures is expected to give greater freedom in bandgap engineering for device applications. One of the main challenges to overcome is the effect of indium and antimony surface segregation. Using several very high resolution analysis techniques we clearly demonstrate blocking of indium incorporation by antimony. Furthermore, indium incorporation resumes when the antimony concentration drops below a critical level. This leads to major differences between nominal and actual structures.
Bibliography:ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
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ISSN:0957-4484
1361-6528
DOI:10.1088/0957-4484/21/14/145606