Temperature-dependent efficiency droop in AlGaN epitaxial layers and quantum wells

Luminescence efficiency droop has been studied in AlGaN epitaxial layers and multiple quantum wells (MQWs) with different strength of carrier localization in a wide range of temperatures. It is shown that the dominant mechanism leading to droop, i.e., the efficiency reduction at high carrier densiti...

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Published inAIP advances Vol. 6; no. 4; pp. 045212 - 045212-5
Main Authors Mickevičius, J., Jurkevičius, J., Kadys, A., Tamulaitis, G., Shur, M., Shatalov, M., Yang, J., Gaska, R.
Format Journal Article
LanguageEnglish
Published Melville American Institute of Physics 01.04.2016
AIP Publishing LLC
Subjects
ALUMINIUM COMPOUNDS
CARRIER DENSITY
Carrier recombination
Carrier transport
CARRIERS
CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY
DEFECTS
EFFICIENCY
Epitaxial layers
EPITAXY
EXCITATION
GALLIUM COMPOUNDS
LAYERS
Localization
LUMINESCENCE
NITROGEN COMPOUNDS
OCCUPATIONS
QUANTUM WELLS
RECOMBINATION
REDUCTION
STIMULATED EMISSION
TEMPERATURE DEPENDENCE
Thermal energy
THERMALIZATION
Thermalization (energy absorption)
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Summary:Luminescence efficiency droop has been studied in AlGaN epitaxial layers and multiple quantum wells (MQWs) with different strength of carrier localization in a wide range of temperatures. It is shown that the dominant mechanism leading to droop, i.e., the efficiency reduction at high carrier densities, is determined by the carrier thermalization conditions and the ratio between carrier thermal energy and localization depth. The droop mechanisms, such as the occupation-enhanced redistribution of nonthermalized carriers, the enhancement of nonradiative recombination due to carrier delocalization, and excitation-enhanced carrier transport to extended defects or stimulated emission, are discussed.
ISSN:2158-3226
2158-3226
DOI:10.1063/1.4947574