Recent Progress in Obtaining Semiconducting Single-Walled Carbon Nanotubes for Transistor Applications

High purity semiconducting single‐walled carbon nanotubes (s‐SWCNTs) with a narrow diameter distribution are required for high‐performance transistors. Achieving this goal is extremely challenging because the as‐grown material contains mixtures of s‐SWCNTs and metallic‐ (m‐) SWCNTs with wide diamete...

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Published inAdvanced materials (Weinheim) Vol. 27; no. 48; pp. 7908 - 7937
Main Authors Islam, Ahmad E., Rogers, John A., Alam, Muhammad A.
Format Journal Article
LanguageEnglish
Published Germany Blackwell Publishing Ltd 22.12.2015
Subjects
carbon nanotubes
Collection
field-effect mobility
Integrated circuits
Integrity
on/off ratios
on/off ratios, semiconducting purity
Purity
semiconducting purity
Semiconductor devices
Single wall carbon nanotubes
transistor applications
Transistors
Utilities
on/off ratios, semiconducting purity
field-effect mobility
carbon nanotubes
transistor applications
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Abstract High purity semiconducting single‐walled carbon nanotubes (s‐SWCNTs) with a narrow diameter distribution are required for high‐performance transistors. Achieving this goal is extremely challenging because the as‐grown material contains mixtures of s‐SWCNTs and metallic‐ (m‐) SWCNTs with wide diameter distributions, typically inadequate for integrated circuits. Since 2000, numerous ex situ methods have been proposed to improve the purity of the s‐SWCNTs. The majority of these techniques fail to maintain the quality and integrity of the s‐SWCNTs with a few notable exceptions. Here, the progress in realizing high purity s‐SWCNTs in as‐grown and post‐processed materials is highlighted. A comparison of transistor parameters (such as on/off ratio and field‐effect mobility) obtained from test structures establishes the effectiveness of various methods and suggests opportunities for future improvements. Advances in realizing high‐purity semiconducting single‐walled carbon nanotubes via in situ and ex situ approaches are reviewed. The utility of these techniques are compared with an emphasis on materials growth approaches and operational properties of transistors to assess the quality and purity of the resulting collections of nanotubes.
AbstractList High purity semiconducting single-walled carbon nanotubes (s-SWCNTs) with a narrow diameter distribution are required for high-performance transistors. Achieving this goal is extremely challenging because the as-grown material contains mixtures of s-SWCNTs and metallic- (m-) SWCNTs with wide diameter distributions, typically inadequate for integrated circuits. Since 2000, numerous ex situ methods have been proposed to improve the purity of the s-SWCNTs. The majority of these techniques fail to maintain the quality and integrity of the s-SWCNTs with a few notable exceptions. Here, the progress in realizing high purity s-SWCNTs in as-grown and post-processed materials is highlighted. A comparison of transistor parameters (such as on/off ratio and field-effect mobility) obtained from test structures establishes the effectiveness of various methods and suggests opportunities for future improvements.
High purity semiconducting single-walled carbon nanotubes (s-SWCNTs) with a narrow diameter distribution are required for high-performance transistors. Achieving this goal is extremely challenging because the as-grown material contains mixtures of s-SWCNTs and metallic- (m-) SWCNTs with wide diameter distributions, typically inadequate for integrated circuits. Since 2000, numerous ex situ methods have been proposed to improve the purity of the s-SWCNTs. The majority of these techniques fail to maintain the quality and integrity of the s-SWCNTs with a few notable exceptions. Here, the progress in realizing high purity s-SWCNTs in as-grown and post-processed materials is highlighted. A comparison of transistor parameters (such as on/off ratio and field-effect mobility) obtained from test structures establishes the effectiveness of various methods and suggests opportunities for future improvements. Advances in realizing high-purity semiconducting single-walled carbon nanotubes via in situ and ex situ approaches are reviewed. The utility of these techniques are compared with an emphasis on materials growth approaches and operational properties of transistors to assess the quality and purity of the resulting collections of nanotubes.
High purity semiconducting single‐walled carbon nanotubes (s‐SWCNTs) with a narrow diameter distribution are required for high‐performance transistors. Achieving this goal is extremely challenging because the as‐grown material contains mixtures of s‐SWCNTs and metallic‐ (m‐) SWCNTs with wide diameter distributions, typically inadequate for integrated circuits. Since 2000, numerous ex situ methods have been proposed to improve the purity of the s‐SWCNTs. The majority of these techniques fail to maintain the quality and integrity of the s‐SWCNTs with a few notable exceptions. Here, the progress in realizing high purity s‐SWCNTs in as‐grown and post‐processed materials is highlighted. A comparison of transistor parameters (such as on/off ratio and field‐effect mobility) obtained from test structures establishes the effectiveness of various methods and suggests opportunities for future improvements. Advances in realizing high‐purity semiconducting single‐walled carbon nanotubes via in situ and ex situ approaches are reviewed. The utility of these techniques are compared with an emphasis on materials growth approaches and operational properties of transistors to assess the quality and purity of the resulting collections of nanotubes.
Author Islam, Ahmad E.
Alam, Muhammad A.
Rogers, John A.
Author_xml – sequence: 1
  givenname: Ahmad E.
  surname: Islam
  fullname: Islam, Ahmad E.
  email: aeislam@ieee.org
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– sequence: 2
  givenname: John A.
  surname: Rogers
  fullname: Rogers, John A.
  organization: Department of Materials Science and Engineering and Frederick Seitz Materials Research Laboratory, University of Illinois, IL, 61801, Urbana, USA
– sequence: 3
  givenname: Muhammad A.
  surname: Alam
  fullname: Alam, Muhammad A.
  organization: Department of Electrical and Computer Engineering, Purdue University West Lafayette, IN, 47907, USA
BackLink https://www.ncbi.nlm.nih.gov/pubmed/26540144$$D View this record in MEDLINE/PubMed
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Issue 48
Keywords on/off ratios, semiconducting purity
field-effect mobility
carbon nanotubes
transistor applications
Language English
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National Research Council and Air Force Office of Scientific Research
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PublicationCentury 2000
PublicationDate December 22, 2015
PublicationDateYYYYMMDD 2015-12-22
PublicationDate_xml – month: 12
  year: 2015
  text: December 22, 2015
  day: 22
PublicationDecade 2010
PublicationPlace Germany
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PublicationTitle Advanced materials (Weinheim)
PublicationTitleAlternate Adv. Mater
PublicationYear 2015
Publisher Blackwell Publishing Ltd
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Snippet High purity semiconducting single‐walled carbon nanotubes (s‐SWCNTs) with a narrow diameter distribution are required for high‐performance transistors....
High purity semiconducting single-walled carbon nanotubes (s-SWCNTs) with a narrow diameter distribution are required for high-performance transistors....
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SubjectTerms carbon nanotubes
Collection
field-effect mobility
Integrated circuits
Integrity
on/off ratios
on/off ratios, semiconducting purity
Purity
semiconducting purity
Semiconductor devices
Single wall carbon nanotubes
transistor applications
Transistors
Utilities
Title Recent Progress in Obtaining Semiconducting Single-Walled Carbon Nanotubes for Transistor Applications
URI https://api.istex.fr/ark:/67375/WNG-C1WXPXCF-V/fulltext.pdf
https://onlinelibrary.wiley.com/doi/abs/10.1002%2Fadma.201502918
https://www.ncbi.nlm.nih.gov/pubmed/26540144
https://search.proquest.com/docview/1760871825
https://search.proquest.com/docview/1800476149
Volume 27
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