Effect of process parameters on electrical, optical properties of IZO films produced by inclination opposite target type DC magnetron sputtering

• Published in: Transactions of Nonferrous Metals Society of China Vol. 19; no. 4; pp. 997 - 1000
• Main Authors: SHIN, Do-Hoon, KIM, Yun-Hae, HAN, Joong-Won, MOON, Kyung-Man, MURAKAMI, Ri-Ichi
• Format: Journal Article
• Language: English
• Published: Elsevier Ltd 01.08.2009; Korean Air Aerospace Division, Korean Air Lines Co., 103 Daejeo 2-dong, Gangseo-gu,Busan, 618-142, Korea%Department of Mechanical and Material Engineering, Korea Maritime University,Dongsam-dong,Youngdo-ku, Busan, Korea%Department of Mechanical Engineering, The University of Tokushima, 2-1 Minami-josanjima-cho,Tokushima, 770-8506, Japan
• Subjects: electromagnetic wave shielding effectiveness(SE); inclination opposite target type DC magnetron sputtering; indium-zinc-oxide(IZO); transparent conductive oxide(TCO); 光学性能; 工艺参数; 溅射薄膜; 薄膜厚度; indium-zinc-oxide(IZO); electromagnetic wave shielding effectiveness(SE); inclination opposite target type DC magnetron sputtering; transparent conductive oxide(TCO)
• ISSN: 1003-6326
• DOI: 10.1016/s1003-6326(08)60394-5

IZO films were deposited onto PET substrate at room temperature with the inclined opposite target type DC magnetron sputtering equipment, in which a sintered oxide IZO target （doped with 10% ZnO, packing density of 99.99%） was used. The effects of total sputtering pressure and film thickness on IZO films properties were studied. All the films produced at room temperature have a amorphous structure, irrespective of the total sputtering pressure and film thickness. A resistivity of the order of 10^-4 Ω·cm was obtained for IZO films deposited at lower pressure （film thickness of 190 nm）. The resistivity of IZO films deposited at room temperature depends on film thickness and shows a minimum at a thickness of 530 nm.