Raman amplification at 2.2 μm in silicon core fibers with prospects for extended mid-infrared source generation

Raman scattering provides a convenient mechanism to generate or amplify light at wavelengths where gain is not otherwise available. When combined with recent advancements in high-power fiber lasers that operate at wavelengths ~2 μm, great opportunities exist for Raman systems that extend operation f...

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Published inLight, science & applications Vol. 12; no. 1; p. 209
Main Authors Huang, Meng, Sun, Shiyu, Saini, Than S., Fu, Qiang, Xu, Lin, Wu, Dong, Ren, Haonan, Shen, Li, Hawkins, Thomas W., Ballato, John, Peacock, Anna C.
Format Journal Article
LanguageEnglish
Published London Nature Publishing Group UK 30.08.2023
Springer Nature B.V
Nature Publishing Group
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Summary:Raman scattering provides a convenient mechanism to generate or amplify light at wavelengths where gain is not otherwise available. When combined with recent advancements in high-power fiber lasers that operate at wavelengths ~2 μm, great opportunities exist for Raman systems that extend operation further into the mid-infrared regime for applications such as gas sensing, spectroscopy, and biomedical analyses. Here, a thulium-doped fiber laser is used to demonstrate Raman emission and amplification from a highly nonlinear silicon core fiber (SCF) platform at wavelengths beyond 2 μm. The SCF has been tapered to obtain a micrometer-sized core diameter (~1.6 μm) over a length of 6 cm, with losses as low as 0.2 dB cm −1 . A maximum on-off peak gain of 30.4 dB was obtained using 10 W of peak pump power at 1.99 μm, with simulations indicating that the gain could be increased to up to ~50 dB by extending the SCF length. Simulations also show that by exploiting the large Raman gain and extended mid-infrared transparency of the SCF, cascaded Raman processes could yield tunable systems with practical output powers across the 2–5 μm range. This work demonstrates Raman amplification at 2.2 μm and the extension for mid-infrared source generation via cascaded processes by making use of a highly nonlinear silicon core fiber platform.
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ISSN:2047-7538
2095-5545
2047-7538
DOI:10.1038/s41377-023-01250-y