Ultrahigh mobility and giant magnetoresistance in the Dirac semimetal Cd3As2
Three-dimensional analogues of graphene have recently been synthesized. The transport properties of such a Dirac semimetal, Cd 3 As 2 , have been studied, revealing an unexpected mechanism that suppresses backscattering dramatically. Dirac and Weyl semimetals are 3D analogues of graphene in which cr...
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Published in | Nature materials Vol. 14; no. 3; pp. 280 - 284 |
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Main Authors | , , , , , |
Format | Journal Article |
Language | English |
Published |
London
Nature Publishing Group UK
01.03.2015
Nature Publishing Group |
Subjects | |
Online Access | Get full text |
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Summary: | Three-dimensional analogues of graphene have recently been synthesized. The transport properties of such a Dirac semimetal, Cd
3
As
2
, have been studied, revealing an unexpected mechanism that suppresses backscattering dramatically.
Dirac and Weyl semimetals are 3D analogues of graphene in which crystalline symmetry protects the nodes against gap formation
1
,
2
,
3
. Na
3
Bi and Cd
3
As
2
were predicted to be Dirac semimetals
4
,
5
, and recently confirmed to be so by photoemission experiments
6
,
7
,
8
. Several novel transport properties in a magnetic field have been proposed for Dirac semimetals
2
,
9
,
10
,
11
. Here, we report a property of Cd
3
As
2
that was unpredicted, namely a remarkable protection mechanism that strongly suppresses backscattering in zero magnetic field. In single crystals, the protection results in ultrahigh mobility, 9 × 10
6
cm
2
V
−1
s
−1
at 5 K. Suppression of backscattering results in a transport lifetime 10
4
times longer than the quantum lifetime. The lifting of this protection by the applied magnetic field leads to a very large magnetoresistance. We discuss how this may relate to changes to the Fermi surface induced by the applied magnetic field. |
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Bibliography: | SourceType-Scholarly Journals-1 ObjectType-Feature-1 content type line 14 ObjectType-Article-1 ObjectType-Feature-2 content type line 23 |
ISSN: | 1476-1122 1476-4660 1476-4660 |
DOI: | 10.1038/nmat4143 |