Structure and Chemical Composition of Ion-Synthesized Gallium Oxide Nanocrystals in Dielectric Matrices

• Published in: Nanomaterials (Basel, Switzerland) Vol. 13; no. 10; p. 1658
• Main Authors: Korolev, Dmitry S, Kriukov, Ruslan N, Matyunina, Kristina S, Nikolskaya, Alena A, Belov, Alexey I, Mikhaylov, Alexey N, Sushkov, Artem A, Pavlov, Dmitry A, Tetelbaum, David I
• Format: Journal Article
• Language: English
• Published: Switzerland MDPI AG 17.05.2023; MDPI
• Subjects: Aluminum oxide; Annealing; Chemical bonds; Chemical composition; Chemical elements; Chemical synthesis; Crystals; Gallium; gallium oxide; Gallium oxides; Inclusions; Ion beams; Ion implantation; Ion irradiation; ion-beam synthesis; Irradiation; Methods; Nanocrystals; Nanomaterials; Nanostructured materials; Nanotechnology; Radiation; Semiconductors; Silicon; Silicon dioxide; Spectrum analysis; thermal annealing; Transmission electron microscopy; X-ray photoelectron spectroscopy; United States > US; ion implantation; nanocrystals; gallium oxide; thermal annealing; transmission electron microscopy; X-ray photoelectron spectroscopy; ion-beam synthesis
• ISSN: 2079-4991; 2079-4991
• DOI: 10.3390/nano13101658

The ion-beam synthesis of Ga O nanocrystals in dielectric matrices on silicon is a novel and promising way for creating nanomaterials based on gallium oxide. This research studies the regularities of changes, depending on the synthesis regimes used, in the chemical composition of ion-implanted SiO /Si and Al O /Si samples. It has been shown that the formation of Ga-O chemical bonds occurs even in the absence of thermal annealing. We also found the conditions of ion irradiation and annealing at which the content of oxidized gallium in the stochiometric state of Ga O exceeds 90%. For this structure, the formation of Ga O nanocrystalline inclusions was confirmed by transmission electron microscopy.