MOS capacitor on 4H-SiC as a nonvolatile memory element

Nonvolatile memory characteristics of MOS capacitors are presented in this letter. The MOS capacitors have been fabricated on N-type 4H SiC substrate with nitrided oxide-semiconductor interface. The charge-retention time is in the order of 4.6/spl times/10/sup 9/ years, as determined by thermally ac...

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Bibliographic Details
Published inIEEE electron device letters Vol. 23; no. 7; pp. 404 - 406
Main Authors Kuan Yew Cheong, Dimitrijev, S.
Format Journal Article
LanguageEnglish
Published New York IEEE 01.07.2002
The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subjects
Activated
Activation energy
Capacitors
Devices
Extrapolation
Material storage
Metal oxide semiconductors
MOS capacitors
Nonvolatile memory
Potential well
Rams
Random access memory
Read only memory
Read-write memory
Silicon carbide
Temperature
Time measurement
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Summary:Nonvolatile memory characteristics of MOS capacitors are presented in this letter. The MOS capacitors have been fabricated on N-type 4H SiC substrate with nitrided oxide-semiconductor interface. The charge-retention time is in the order of 4.6/spl times/10/sup 9/ years, as determined by thermally activated (275-355/spl deg/C) capacitance-transient measurements and extrapolation to room temperature. The estimated activation energy of the charge-generation processes is 1.6 eV. The results and the analysis presented in this letter demonstrate that 4H SiC MOS capacitors can be used as a memory element in nonvolatile RAMs.
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ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2002.1015217