Three-dimensional vertical structural electrochemical random access memory for high-density integrated synapse device

Three-terminal (3T) structured electrochemical random access memory (ECRAM) has been proposed as a synaptic device based on improved synaptic characteristics. However, the proposed 3T ECRAM has a larger area requirement than 2T synaptic devices; thereby limiting integration density. To overcome this...

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Bibliographic Details
Published inScientific reports Vol. 13; no. 1; p. 14325
Main Authors Kim, Hyejin, Seo, Jongseon, Cho, Seojin, Jeon, Seonuk, Woo, Jiyong, Lee, Daeseok
Format Journal Article
LanguageEnglish
Published London Nature Publishing Group UK 31.08.2023
Nature Publishing Group
Nature Portfolio
Subjects
639/166/987
639/301/1005/1007
639/301/1005/1008
CMOS
Data processing
Electrochemistry
Electrodes
Electrolytes
Electrons
Fabrication
Humanities and Social Sciences
multidisciplinary
Random access memory
Science
Science (multidisciplinary)
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Summary:Three-terminal (3T) structured electrochemical random access memory (ECRAM) has been proposed as a synaptic device based on improved synaptic characteristics. However, the proposed 3T ECRAM has a larger area requirement than 2T synaptic devices; thereby limiting integration density. To overcome this limitation, this study presents the development of a high-density vertical structure for the 3T ECRAM. In addition, complementary metal-oxide semiconductor (CMOS)-compatible materials and 8-inch wafer-based CMOS fabrication processes were utilized to verify the feasibility of mass production. The achievements of this work demonstrate the potential for high-density integration and mass production of 3T ECRAM devices.
Bibliography:ObjectType-Article-1
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ISSN:2045-2322
2045-2322
DOI:10.1038/s41598-023-41202-5