Pentacoordinated Organotin(IV) Complexes as an Alternative in the Design of Highly Efficient Optoelectronic and Photovoltaic Devices: Synthesis and Photophysical Characterization

• Published in: International journal of molecular sciences Vol. 24; no. 6; p. 5255
• Main Authors: Sánchez Vergara, María Elena, Gómez, Elizabeth, Toledo Dircio, Emiliano, Álvarez Bada, José Ramón, Cuenca Pérez, Samuel, Galván Hidalgo, José Miguel, González Hernández, Arturo, Hernández Ortega, Simón
• Format: Journal Article
• Language: English
• Published: Switzerland MDPI AG 09.03.2023; MDPI
• Subjects: Carbon; Dielectric films; Energy gap; Graphene; Heterojunction devices; Heterostructures; Hole mobility; hybrid film; Knoop hardness; Ligands; Mass spectrometry; Mechanical properties; Molecular structure; Optoelectronic devices; Optoelectronics industry; organotin(IV) complexes; organotin–Schiff bases; PEDOT:PSS; pentacoordinated organotin; Plastic deformation; Scientific imaging; Solar energy industry; Thin films; Tin compounds; Mexico; Germany; organotin–Schiff bases; optical properties; pentacoordinated organotin; electrical properties; hybrid film; organotin(IV) complexes; graphene; PEDOT:PSS
• ISSN: 1422-0067; 1661-6596; 1422-0067
• DOI: 10.3390/ijms24065255

The synthesis of four pentacoordinated organotin(IV) complexes prepared in a one-pot reaction from 2-hydroxy-1-naphthaldehyde, 2-amino-3-hydroxypyridine and organotin oxides is reported. The complexes were characterized by UV-Vis, IR, MS, H, C and Sn NMR techniques. The compound based on 2,2-diphenyl-6-aza-1,3-dioxa-2-stannanaphtho[1,2-h]pyrido[3,2-d]cyclononene revealed the formation of a monomeric complex with a distorted five-coordinated molecular geometry intermediate between the trigonal bipyramidal and square pyramidal. In order to find possible applications in photovoltaic devices, hybrid films of organotin(IV) complexes embedded in poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) with graphene were deposited. The topographic and mechanical properties were examined. The film with the complex integrated into the cyclohexyl substituent has high plastic deformation, with a maximum stress of 1.69 × 10 Pa and a Knoop hardness of 0.061. The lowest values of 1.85 eV for the onset gap and 3.53 eV for the energy gap were obtained for the heterostructure having the complex with the phenyl substituent. Bulk heterojunction devices were fabricated; these devices showed ohmic behavior at low voltages and a space-charge-limited current (SCLC) conduction mechanism at higher voltages. A value of 0.02 A was found for the maximum carried current. The SCLC mechanism suggests hole mobility values of between 2.62 × 10 and 3.63 cm /V s and concentrations of thermally excited holes between 2.96 × 10 and 4.38 × 10 m .