Giant tunable spin Hall angle in sputtered Bi2Se3 controlled by an electric field

• Published in: Nature communications Vol. 13; no. 1; pp. 1650 - 8
• Main Authors: Lu, Qi, Li, Ping, Guo, Zhixin, Dong, Guohua, Peng, Bin, Zha, Xi, Min, Tai, Zhou, Ziyao, Liu, Ming
• Format: Journal Article
• Language: English
• Published: London Nature Publishing Group UK 28.03.2022; Nature Publishing Group; Nature Portfolio
• Subjects: 147/137; 147/28; 147/3; 639/301/1005/1007; 639/766/119/1001; Electric fields; Electrons; Energy efficiency; Humanities and Social Sciences; multidisciplinary; Piezoelectricity; Power consumption; Power management; Science; Science (multidisciplinary); Substrates; Topological insulators
• ISSN: 2041-1723; 2041-1723
• DOI: 10.1038/s41467-022-29281-w

Finding an effective way to greatly tune spin Hall angle in a low power manner is of fundamental importance for tunable and energy-efficient spintronic devices. Recently, topological insulator of Bi 2 Se 3 , having a large intrinsic spin Hall angle, show great capability to generate strong current-induced spin-orbit torques. Here we demonstrate that the spin Hall angle in Bi 2 Se 3 can be effectively tuned asymmetrically and even enhanced about 600% reversibly by applying a bipolar electric field across the piezoelectric substrate. We reveal that the enhancement of spin Hall angle originates from both the charge doping and piezoelectric strain effet on the spin Berry curvature near Fermi level in Bi 2 Se 3 . Our findings provide a platform for achieving low power consumption and tunable spintronic devices. Controlling the spin Hall angle is significant to tunable and energy-efficient spintronic devices. Here, the authors demonstrate that the spin Hall angle in Bi 2 Se 3 can be tuned and even enhanced about 600% reversibly by the electric field.