Si nanowire metal–insulator–semiconductor photodetectors as efficient light harvesters

Novel ITO-Si nanowire (NW) metal-insulator-semiconductor (MIS) photodetectors were fabricated by using n-type Si NWs as detection units and ITO films as top gate electrodes. Measurements on the Si NW based device reveal a significant photoresponse, including photocurrent generation with an external...

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Bibliographic Details
Published inNanotechnology Vol. 21; no. 9; p. 095502
Main Authors Bae, Joonho, Kim, Hyunjin, Zhang, Xiao-Mei, Dang, Cuong H, Zhang, Yue, Jin Choi, Young, Nurmikko, Arto, Lin Wang, Zhong
Format Journal Article
LanguageEnglish
Published England IOP Publishing 05.03.2010
Subjects
Bias
Devices
Indium tin oxide
Nanocomposites
Nanomaterials
Nanostructure
Nanowires
Photodetectors
Silicon
Wavelengths
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Summary:Novel ITO-Si nanowire (NW) metal-insulator-semiconductor (MIS) photodetectors were fabricated by using n-type Si NWs as detection units and ITO films as top gate electrodes. Measurements on the Si NW based device reveal a significant photoresponse, including photocurrent generation with an external quantum efficiency (EQE) of approximately 35% at a peak wavelength of 600 nm at zero external bias, and with an EQE of 70% at a peak wavelength of 800 nm at - 0.5 V bias. The NW device shows a flat and low reflectance and almost constant EQE up to a 60 degrees incident angle of illumination, demonstrating efficient visible-light harvesting by the Si NW antenna.
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ISSN:0957-4484
1361-6528
DOI:10.1088/0957-4484/21/9/095502