Low-Consumption Synaptic Devices Based on Gate-All-Around InAs Nanowire Field-Effect Transistors

• Published in: Nanoscale research letters Vol. 17; no. 1; p. 101
• Main Authors: Zha, Chaofei, Luo, Wei, Zhang, Xia, Yan, Xin, Ren, Xiaomin
• Format: Journal Article
• Language: English
• Published: New York Springer US 27.10.2022; Springer Nature B.V; SpringerOpen
• Subjects: Artificial intelligence; Artificial synapses; Brain; Chemistry and Materials Science; Energy consumption; Field effect transistors; Gate-all-around field-effect transistor; InAs nanowires; Indium arsenides; Indium oxides; Information storage; Long-term depression; Long-term potentiation; Materials Science; Membranes; Molecular beam epitaxy; Molecular Medicine; Nanochemistry; Nanoscale Science and Technology; Nanotechnology; Nanotechnology and Microengineering; Nanowires; Organic chemicals; Semiconductor devices; Short-term depression; Surface charge; Synapse function; Synaptogenesis; Transistors; Voltage; Voltage pulses; InAs nanowires; Synapse function; Gate-all-around field-effect transistor; Artificial synapses
• ISSN: 1556-276X; 1931-7573; 1556-276X
• DOI: 10.1186/s11671-022-03740-1

In this work, an artificial electronic synaptic device based on gate-all-around InAs nanowire field-effect transistor is proposed and analyzed. The deposited oxide layer (In 2 O 3 ) on the InAs nanowire surface serves as a charge trapping layer for information storage. The gate voltage pulse serves as stimuli of the presynaptic membrane, and the drain current and channel conductance are treated as post-synaptic current and weights of the postsynaptic membrane, respectively. At low gate voltages, the device simulates synaptic behaviors including short-term depression and long-term depression. By increasing the amplitude and quantity of gate voltage pulses, the transition from short-term depression to long-term potentiation can be achieved. The device exhibits a large memory window of over 1 V and a minimal energy consumption of 12.5 pJ per synaptic event. This work may pave the way for the development of miniaturized low-consumption synaptic devices and related neuromorphic systems.