Semiconducting black phosphorus: synthesis, transport properties and electronic applications

Phosphorus is one of the most abundant elements preserved in earth, and it comprises a fraction of ∼0.1% of the earth crust. In general, phosphorus has several allotropes, and the two most commonly seen allotropes, i.e. white and red phosphorus, are widely used in explosives and safety matches. In a...

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Published inChemical Society reviews Vol. 44; no. 9; pp. 2732 - 2743
Main Authors Liu, Han, Du, Yuchen, Deng, Yexin, Ye, Peide D
Format Journal Article
LanguageEnglish
Published England 07.05.2015
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Summary:Phosphorus is one of the most abundant elements preserved in earth, and it comprises a fraction of ∼0.1% of the earth crust. In general, phosphorus has several allotropes, and the two most commonly seen allotropes, i.e. white and red phosphorus, are widely used in explosives and safety matches. In addition, black phosphorus, though rarely mentioned, is a layered semiconductor and has great potential in optical and electronic applications. Remarkably, this layered material can be reduced to one single atomic layer in the vertical direction owing to the van der Waals structure, and is known as phosphorene, in which the physical properties can be tremendously different from its bulk counterpart. In this review article, we trace back to the research history on black phosphorus of over 100 years from the synthesis to material properties, and extend the topic from black phosphorus to phosphorene. The physical and transport properties are highlighted for further applications in electronic and optoelectronics devices. Phosphorus is one of the most abundant elements preserved in earth, and it comprises a fraction of ∼0.1% of the earth crust.
Bibliography:Yexin Deng received the BS degree from Peking University, Beijing, China, in 2013. He is currently working toward his PhD degree with the School of Electrical and Computer Engineering, Purdue University, West Lafayette, Indiana, USA. His past research activities include design and simulation of 2D and 3D RRAM array architectures. He is currently working on 2D semiconductor electronic and optoelectronic devices.
Dr Peide Ye is a Professor of Electrical and Computer Engineering and University Faculty Scholar at Purdue University in USA. He received the BS from Fudan University, Shanghai, China, in 1988 and PhD from Max-Planck-Institute of Solid State Research, Stuttgart, Germany, in 1996. Before joining Purdue faculty in 2005, he worked for NTT, NHMFL/Princeton University, and Bell Labs/Agere Systems. His current research is focused on ALD high-k integration on novel channel materials, which include III-V, Ge, CNTs and graphene, complex oxides, topological insulators, and 2D crystals. He has authored and co-authored more than 300 peer reviewed articles and conference presentations. He is a Fellow of IEEE.
Yuchen Du received his BS degree in Physics from Arizona State University in 2012. He then joined the research group of Professor Peide D. Ye at Purdue University, School of Electrical and Computer Engineering. His current research interest focuses on the 2D semiconducting materials, nano-electronic devices, and magneto-transport.
Han Liu received BS (2007) and MS (2010) in microelectronics from Fudan University, Shanghai, China. From 2010 to 2014, he was a PhD student under supervision of Prof. Ye in School of Electrical and Computer Engineering of Purdue University. His research interest focused on the material and device aspects of 2D semiconducting crystals. He has been working with Intel Corporation as a device engineer since 2014.
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ISSN:0306-0012
1460-4744
DOI:10.1039/c4cs00257a