Ferroelectric Field Effect Transistors Based on PZT and IGZO

• Published in: IEEE journal of the Electron Devices Society Vol. 7; pp. 268 - 275
• Main Authors: Besleaga, Cristina, Radu, Roxana, Balescu, Liliana-Marinela, Stancu, Viorica, Costas, Andreea, Dumitru, Viorel, Stan, George, Pintilie, Lucian
• Format: Journal Article
• Language: English
• Published: New York IEEE 2019; The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
• Subjects: Amorphous materials; Capacitance-voltage characteristics; Ferroelectric materials; Ferroelectric transistor; Ferroelectricity; Field effect transistors; Gallium; Hafnium compounds; Hysteresis; IGZO; Indium gallium zinc oxide; Lead zirconate titanates; Logic gates; Magnetron sputtering; PZT; Semiconductor devices; Silicon; Silicon dioxide; Sol-gel processes; Thin films; Transistors; Zinc oxide
• ISSN: 2168-6734; 2168-6734
• DOI: 10.1109/JEDS.2019.2895367

Ferroelectric field effect transistors (FeFETs) based on lead zirconate titanate (PZT) ferroelectric material and amorphous-indium-gallium-zinc oxide (a-IGZO) were developed and characterized. The PZT material was processed by a sol-gel method and then used as ferroelectric gate. The a-IGZO thin films, having the role of channel semiconductor, were deposited by radio-frequency magnetron sputtering, at a temperature of ~50°C. Characteristics of a typical field effect transistor with SiO 2 gate insulator, grown on highly doped silicon, and of the PZT-based FeFET were compared. It was proven that the FeFETs had promising performances in terms of I on /I off ratio (i.e., 10 6 ) and IDS retention behavior.