Highly stretchable polymer semiconductor films through the nanoconfinement effect

Soft and conformable wearable electronics require stretchable semiconductors, but existing ones typically sacrifice charge transport mobility to achieve stretchability. We explore a concept based on the nanoconfinement of polymers to substantially improve the stretchability of polymer semiconductors...

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Published inScience (American Association for the Advancement of Science) Vol. 355; no. 6320; pp. 59 - 64
Main Authors Xu, Jie, Wang, Sihong, Wang, Ging-Ji Nathan, Zhu, Chenxin, Luo, Shaochuan, Jin, Lihua, Gu, Xiaodan, Chen, Shucheng, Feig, Vivian R., To, John W. F., Rondeau-Gagné, Simon, Park, Joonsuk, Schroeder, Bob C., Lu, Chien, Oh, Jin Young, Wang, Yanming, Kim, Yun-Hi, Yan, He, Sinclair, Robert, Zhou, Dongshan, Xue, Gi, Murmann, Boris, Linder, Christian, Cai, Wei, Tok, Jeffery B.-H., Chung, Jong Won, Bao, Zhenan
Format Journal Article
LanguageEnglish
Published United States American Association for the Advancement of Science 06.01.2017
The American Association for the Advancement of Science
AAAS
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Summary:Soft and conformable wearable electronics require stretchable semiconductors, but existing ones typically sacrifice charge transport mobility to achieve stretchability. We explore a concept based on the nanoconfinement of polymers to substantially improve the stretchability of polymer semiconductors, without affecting charge transport mobility. The increased polymer chain dynamics under nanoconfinement significantly reduces the modulus of the conjugated polymer and largely delays the onset of crack formation under strain. As a result, our fabricated semiconducting film can be stretched up to 100% strain without affecting mobility, retaining values comparable to that of amorphous silicon. The fully stretchable transistors exhibit high biaxial stretchability with minimal change in on current even when poked with a sharp object. We demonstrate a skinlike finger-wearable driver for a light-emitting diode.
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Hong Kong Innovation and Technology Commission
National Research Fund of Luxembourg
National Research Foundation of Korea (NRF)
USDOE Office of Science (SC), Basic Energy Sciences (BES)
National Science Foundation (NSF)
AC02-76SF00515; SC0016523; CMMI-1553638; AC02-05CH11231
Samsung Electronics
ISSN:0036-8075
1095-9203
DOI:10.1126/science.aah4496