Atomic Layer Deposited Hf0.5Zr0.5O2-based Flexible Memristor with Short/Long-Term Synaptic Plasticity

• Published in: Nanoscale research letters Vol. 14; no. 1; pp. 1 - 6
• Main Authors: Wang, Tian-Yu, Meng, Jia-Lin, He, Zhen-Yu, Chen, Lin, Zhu, Hao, Sun, Qing-Qing, Ding, Shi-Jin, Zhang, David Wei
• Format: Journal Article
• Language: English
• Published: New York Springer US 15.03.2019; Springer Nature B.V; SpringerOpen
• Subjects: Applications of Atomic Layer Deposition; Artificial intelligence; Atomic layer deposition; Atomic layer epitaxy; Chemistry and Materials Science; Computation; Conductance; Electrodes; Filaments; Flexible electronics; Learning; Low temperature; Low-temperature process; Materials Science; Memristors; Molecular Medicine; Nano Express; Nanochemistry; Nanoscale Science and Technology; Nanotechnology; Nanotechnology and Microengineering; Plasticity; Polyethylene terephthalate; Resistance; Synapses; Synaptic plasticity; Atomic layer deposition; Low-temperature process; Flexible electronics; Synaptic plasticity
• ISSN: 1931-7573; 1556-276X
• DOI: 10.1186/s11671-019-2933-y

Artificial synapses are the fundamental of building a neuron network for neuromorphic computing to overcome the bottleneck of the von Neumann system. Based on a low-temperature atomic layer deposition process, a flexible electrical synapse was proposed and showed bipolar resistive switching characteristics. With the formation and rupture of ions conductive filaments path, the conductance was modulated gradually. Under a series of pre-synaptic spikes, the device successfully emulated remarkable short-term plasticity, long-term plasticity, and forgetting behaviors. Therefore, memory and learning ability were integrated to the single flexible memristor, which are promising for the next-generation of artificial neuromorphic computing systems.