A Brief Overview of the Rapid Progress and Proposed Improvements in Gallium Nitride Epitaxy and Process for Third-Generation Semiconductors with Wide Bandgap

In this paper, we will discuss the rapid progress of third-generation semiconductors with wide bandgap, with a special focus on the gallium nitride (GaN) on silicon (Si). This architecture has high mass-production potential due to its low cost, larger size, and compatibility with CMOS-fab processes....

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Bibliographic Details
Published inMicromachines (Basel) Vol. 14; no. 4; p. 764
Main Authors Liu, An-Chen, Lai, Yung-Yu, Chen, Hsin-Chu, Chiu, An-Ping, Kuo, Hao-Chung
Format Journal Article
LanguageEnglish
Published Switzerland MDPI AG 29.03.2023
MDPI
Subjects
Chemical vapor deposition
Defects
Design
Energy gap
Epitaxy
Gallium nitrate
gallium nitride
Gallium nitride epitaxy
Gallium nitrides
GaN on Si/SiC/QST
Heat conductivity
high electron mobility transistor
High electron mobility transistors
Liquors
Metalorganic chemical vapor deposition
Microscopy
Molecular beam epitaxy
Nitrides
Organic chemistry
Review
Semiconductor devices
Semiconductors
Silicon
Substrates
Superlattices
Thin films
Taiwan
high electron mobility transistor
GaN on Si/SiC/QST
gallium nitride
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Summary:In this paper, we will discuss the rapid progress of third-generation semiconductors with wide bandgap, with a special focus on the gallium nitride (GaN) on silicon (Si). This architecture has high mass-production potential due to its low cost, larger size, and compatibility with CMOS-fab processes. As a result, several improvements have been proposed in terms of epitaxy structure and high electron mobility transistor (HEMT) process, particularly in the enhancement mode (E-mode). IMEC has made significant strides using a 200 mm 8-inch Qromis Substrate Technology (QST®) substrate for breakdown voltage to achieve 650 V in 2020, which was further improved to 1200 V by superlattice and carbon-doped in 2022. In 2016, IMEC adopted VEECO metal-organic chemical vapor deposition (MOCVD) for GaN on Si HEMT epitaxy structure and the process by implementing a three-layer field plate to improve dynamic on-resistance (RON). In 2019, Panasonic HD-GITs plus field version was utilized to effectively improve dynamic RON. Both reliability and dynamic RON have been enhanced by these improvements.
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ISSN:2072-666X
2072-666X
DOI:10.3390/mi14040764