Atomic Layer Etching Using a Novel Radical Generation Module

To fabricate miniature semiconductors of 10 nm or less, various process technologies have reached their physical limits, and new process technologies for miniaturization are required. In the etching process, problems such as surface damage and profile distortion have been reported during etching usi...

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Bibliographic Details
Published inMaterials Vol. 16; no. 10; p. 3611
Main Authors Jung, Junho, Kim, Kyongnam
Format Journal Article
LanguageEnglish
Published Switzerland MDPI AG 09.05.2023
MDPI
Subjects
Adsorption
atomic layer etching
Atoms & subatomic particles
Beer
EPC
Etching
Gas flow
Gases
Innovations
Modules
plasma
Plasma etching
semiconductor
Semiconductors
Silicon wafers
Technology application
Transistors
United States > US
EPC
plasma
semiconductor
atomic layer etching
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Summary:To fabricate miniature semiconductors of 10 nm or less, various process technologies have reached their physical limits, and new process technologies for miniaturization are required. In the etching process, problems such as surface damage and profile distortion have been reported during etching using conventional plasma. Therefore, several studies have reported novel etching techniques such as atomic layer etching (ALE). In this study, a new type of adsorption module, called the radical generation module, was developed and applied in the ALE process. Using this module, the adsorption time could be reduced to 5 s. Moreover, the reproducibility of the process was verified and an etch per cycle of 0.11 nm/cycle was maintained as the process progressed up to 40 cycles.
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ISSN:1996-1944
1996-1944
DOI:10.3390/ma16103611