Contactless probing of the intrinsic carrier transport single-walled carbon nanotubes

Intrinsic carrier transport properties of single-walled carbon nanotubes have been probed by two parallel methods on the same individual tubes： The contactless dielectric force microscopy （DFM） technique and the conventional field-effect transistor （FET） method. The dielectric responses of SWNTs are...

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Bibliographic Details
Published inNano research Vol. 7; no. 11; pp. 1623 - 1630
Main Authors Li, Yize Stephanie, Ge, Jun, Cai, Jinhua, Zhang, Jie, Lu, Wei, Liu, Jia, Chen, Liwei
Format Journal Article
LanguageEnglish
Published Heidelberg Tsinghua University Press 01.11.2014
Springer Nature B.V
Subjects
Atomic/Molecular Structure and Spectra
Biomedicine
Biotechnology
Carbon
Carrier transport
Chemical vapor deposition
Chemistry and Materials Science
Condensed Matter Physics
Dielectric properties
Electric potential
Electrons
Experiments
Materials Science
Mathematical models
Microscopy
Nanomaterials
Nanostructure
Nanotechnology
Nanowires
Research Article
Semiconductor research
Single wall carbon nanotubes
Transistors
Transport
Voltage
介电响应
单壁碳纳米管
场效应晶体管
本征
纳米级分辨率
载流子传输
输运特性
非接触式探测
United States > US
carrier mobility
carrier density
electronic transport
field-effect transistor
dielectric force microscopy
single-walled carbon nanotubes
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Summary:Intrinsic carrier transport properties of single-walled carbon nanotubes have been probed by two parallel methods on the same individual tubes： The contactless dielectric force microscopy （DFM） technique and the conventional field-effect transistor （FET） method. The dielectric responses of SWNTs are strongly correlated with electronic transport of the corresponding FETs. The DC bias voltage in DFM plays a role analogous to the gate voltage in FET. A microscopic model based on the general continuity equation and numerical simulation is built to reveal the link between intrinsic properties such as carrier concentration and mobility and the macroscopic observable, i.e. dielectric responses, in DFM experiments. Local transport barriers in nanotubes, which influence the device transport behaviors, are also detected with nanometer scale resolution.
Bibliography:Intrinsic carrier transport properties of single-walled carbon nanotubes have been probed by two parallel methods on the same individual tubes： The contactless dielectric force microscopy （DFM） technique and the conventional field-effect transistor （FET） method. The dielectric responses of SWNTs are strongly correlated with electronic transport of the corresponding FETs. The DC bias voltage in DFM plays a role analogous to the gate voltage in FET. A microscopic model based on the general continuity equation and numerical simulation is built to reveal the link between intrinsic properties such as carrier concentration and mobility and the macroscopic observable, i.e. dielectric responses, in DFM experiments. Local transport barriers in nanotubes, which influence the device transport behaviors, are also detected with nanometer scale resolution.
11-5974/O4
single-walled carbon nanotubes,electronic transport,dielectric force microscopy,field-effect transistor,carrier density,carrier mobility
ObjectType-Article-1
SourceType-Scholarly Journals-1
ObjectType-Feature-2
content type line 23
ISSN:1998-0124
1998-0000
DOI:10.1007/s12274-014-0522-z