Vertical GaN MOSFET Power Devices

• Published in: Micromachines (Basel) Vol. 14; no. 10; p. 1937
• Main Authors: Langpoklakpam, Catherine, Liu, An-Chen, Hsiao, Yi-Kai, Lin, Chun-Hsiung, Kuo, Hao-Chung
• Format: Journal Article
• Language: English
• Published: Switzerland MDPI AG 16.10.2023; MDPI
• Subjects: breakdown voltage; electric field; Electric fields; Electronic devices; Gallium nitrate; Gallium nitrides; GaN power device; Integrated circuits; Liquors; Metal oxide semiconductor field effect transistors; MOSFET; MOSFETs; Nitrides; Power electronics; Receivers & amplifiers; Review; Semiconductor chips; Semiconductors; Silicon nitride; specific on-resistance; Technology application; MOSFET; electric field; GaN power device; breakdown voltage; specific on-resistance
• ISSN: 2072-666X; 2072-666X
• DOI: 10.3390/mi14101937

Gallium nitride (GaN) possesses remarkable characteristics such as a wide bandgap, high critical electric field, robust antiradiation properties, and a high saturation velocity for high-power devices. These attributes position GaN as a pivotal material for the development of power devices. Among the various GaN-based devices, vertical GaN MOSFETs stand out for their numerous advantages over their silicon MOSFET counterparts. These advantages encompass high-power device applications. This review provides a concise overview of their significance and explores their distinctive architectures. Additionally, it delves into the advantages of vertical GaN MOSFETs and highlights their recent advancements. In conclusion, the review addresses methods to enhance the breakdown voltage of vertical GaN devices. This comprehensive perspective underscores the pivotal role of vertical GaN MOSFETs in the realm of power electronics and their continual progress.