C-Band 30 W High PAE Power Amplifier MMIC with Second Harmonic Suppression for Radar Network Application

In order to meet the application requirements of radar networks for high efficiency and high second harmonic suppression (SHS) of power amplifiers, this paper proposes a C-band 30 W power amplifier (PA) microwave monolithic integrated circuit (MMIC) based on 0.25 μm gallium nitride (GaN) high electr...

Full description

Saved in:
Bibliographic Details
Published inMicromachines (Basel) Vol. 13; no. 12; p. 2079
Main Authors Yang, Fan, Song, Leijun, Xu, Yuehang
Format Journal Article
LanguageEnglish
Published Switzerland MDPI AG 26.11.2022
MDPI
Subjects
Online AccessGet full text

Cover

Loading…
More Information
Summary:In order to meet the application requirements of radar networks for high efficiency and high second harmonic suppression (SHS) of power amplifiers, this paper proposes a C-band 30 W power amplifier (PA) microwave monolithic integrated circuit (MMIC) based on 0.25 μm gallium nitride (GaN) high electron mobility transistor (HEMT) process. The proposed PA uses a two-stage amplifier structure to achieve high power gain. A topology with SHS is designed in the output-matching network. Besides, the large signal model load pull simulation and the harmonic control technology in the output stage are used to improve efficiency. The high-power additional efficiency (PAE) and high SHS of the PA MMIC are achieved simultaneously. In the 5-6 GHz frequency range, multiple indicator measurements of the proposed PA show that output power is over 45 dBm, the PAE is more than 57%, the SHS exceeds 45 dBc, the power gain is greater than 24 dB, which are conducted under the condition of 100 μs pulse width and 10% duty cycle. In addition, the size of the PA MMIC, including bonding pads, is 3.3 × 3.1 mm .
Bibliography:ObjectType-Article-1
SourceType-Scholarly Journals-1
ObjectType-Feature-2
content type line 23
ISSN:2072-666X
2072-666X
DOI:10.3390/mi13122079