A Unified Current-Voltage Model for Metal Oxide-Based Resistive Random-Access Memory

• Published in: Materials Vol. 16; no. 1; p. 182
• Main Authors: Chung, Harry, Shin, Hyungsoon, Park, Jisun, Sun, Wookyung
• Format: Journal Article
• Language: English
• Published: Switzerland MDPI AG 25.12.2022; MDPI
• Subjects: Analysis; Bias; Electric potential; Electric properties; Electrodes; HSPICE; Memory (Computers); Memory devices; memristive device; memristor; Metal oxides; Physical properties; Random access memory; resistive random-access memory (RRAM); resistive switching; Switching; Voltage; HSPICE; resistive switching; memristive device; resistive random-access memory (RRAM); memristor
• ISSN: 1996-1944; 1996-1944
• DOI: 10.3390/ma16010182

Resistive random-access memory (RRAM) is essential for developing neuromorphic devices, and it is still a competitive candidate for future memory devices. In this paper, a unified model is proposed to describe the entire electrical characteristics of RRAM devices, which exhibit two different resistive switching phenomena. To enhance the performance of the model by reflecting the physical properties such as the length index of the undoped area during the switching operation, the Voltage ThrEshold Adaptive Memristor (VTEAM) model and the tungsten-based model are combined to represent two different resistive switching phenomena. The accuracy of the I-V relationship curve tails of the device is improved significantly by adjusting the ranges of unified internal state variables. Furthermore, the unified model describes a variety of electrical characteristics and yields continuous results by using the device's current-voltage relationship without dividing its fitting conditions. The unified model describes the optimized electrical characteristics that reflect the electrical behavior of the device.