Electrically bistable memory device based on spin-coated molecular complex thin film
We present an organic electrically bistable memory device based on the molecular complex film composed of tetracyanoquinodimethane and a soluble methanofullerene derivative [6,6]-phenyl C61-butyric acid methyl ester. The device has an Al/molecules/Al sandwich-like structure. The molecular layer was...
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Published in | IEEE electron device letters Vol. 27; no. 3; pp. 151 - 153 |
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Main Authors | , , , |
Format | Journal Article |
Language | English |
Published |
New York, NY
IEEE
01.03.2006
Institute of Electrical and Electronics Engineers The Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
Subjects | |
Online Access | Get full text |
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Summary: | We present an organic electrically bistable memory device based on the molecular complex film composed of tetracyanoquinodimethane and a soluble methanofullerene derivative [6,6]-phenyl C61-butyric acid methyl ester. The device has an Al/molecules/Al sandwich-like structure. The molecular layer was formed by spin-coating technique instead of expensive vacuum deposition method. The current-voltage characteristics show that the device switches from the initial "low" conduction state to "high" conduction state upon application of external electric field at room temperature. The on/off ratio is up to 10/sup 6/. Either state has been found to remain stable for more than five months, even after the external electric field is removed. The device presented is of potential use for low-cost write-once-read-many-times memory applications. |
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Bibliography: | ObjectType-Article-1 SourceType-Scholarly Journals-1 ObjectType-Feature-2 content type line 23 ObjectType-Article-2 ObjectType-Feature-1 |
ISSN: | 0741-3106 1558-0563 |
DOI: | 10.1109/LED.2005.863568 |