Irregular Electrical Conduction Types in Tin Oxide Thin Films Induced by Nanoscale Phase Separation
The development of p‐channel tin oxide thin‐film‐transistors spurred the research into microstructural analysis of tin oxide phases and control of conduction type, as it is widely known that tin oxide thin films exhibit both n‐ and p‐type conduction depending on growth conditions. This study reports...
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Published in | Journal of the American Ceramic Society Vol. 95; no. 1; pp. 324 - 327 |
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Main Authors | , , , , , |
Format | Journal Article |
Language | English |
Published |
Columbus
Blackwell Publishing Ltd
01.01.2012
Wiley Subscription Services, Inc |
Subjects | |
Online Access | Get full text |
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Summary: | The development of p‐channel tin oxide thin‐film‐transistors spurred the research into microstructural analysis of tin oxide phases and control of conduction type, as it is widely known that tin oxide thin films exhibit both n‐ and p‐type conduction depending on growth conditions. This study reports the relationship between the microstructural properties and the ambiguity of the electrical conduction type observed in nonstoichiometric tin oxides. Nonstoichiometric tin oxide thin films have been produced by RF magnetron sputtering with a dependence on the growth gas atmosphere. The crystal phase of the tin oxide deposited under low ambient oxygen content was mainly SnO1+x with relatively stable p‐type conduction. On the other hand, for deposition under high ambient oxygen content, phase separation with structural modulation in the tin oxide film occurred in SnO‐like and SnO2‐like regions. These phases with different conduction types caused electrically unstable dual conduction types in the tin oxide films, despite their low electrical resistivity. |
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Bibliography: | ArticleID:JACE4791 Basic Science Research Program - No. D00153 ark:/67375/WNG-7KVNN2N6-M Pioneer Research Center Program through the National Research Foundation of Korea - No. 2011-0001650 IT R&D program of MKE/IITA - No. 2009-F-018-01 istex:C4CA8DAC0D0CA9F389EEAAEC8B4FD87A60B57FD4 Priority Research Centers Program - No. 2009-0094040 ObjectType-Article-2 SourceType-Scholarly Journals-1 ObjectType-Feature-1 content type line 23 ObjectType-Article-1 ObjectType-Feature-2 |
ISSN: | 0002-7820 1551-2916 |
DOI: | 10.1111/j.1551-2916.2011.04791.x |