Quantifying the Performance of P-Type Transparent Conducting Oxides by Experimental Methods

• Published in: Materials Vol. 10; no. 9; p. 1019
• Main Authors: Fleischer, Karsten, Norton, Emma, Mullarkey, Daragh, Caffrey, David, Shvets, Igor V
• Format: Journal Article
• Language: English
• Published: Switzerland MDPI 01.09.2017; MDPI AG
• Subjects: figure of merit; material screening; p-type; selective contact; solar cell; TCO; TFT; transparent conducting oxide; TCO; TFT; selective contact; p-type; figure of merit; material screening; solar cell; transparent conducting oxide
• ISSN: 1996-1944; 1996-1944
• DOI: 10.3390/ma10091019

Screening for potential new materials with experimental and theoretical methods has led to the discovery of many promising candidate materials for p-type transparent conducting oxides. It is difficult to reliably assess a good p-type transparent conducting oxide (TCO) from limited information available at an early experimental stage. In this paper we discuss the influence of sample thickness on simple transmission measurements and how the sample thickness can skew the commonly used figure of merit of TCOs and their estimated band gap. We discuss this using copper-deficient CuCrO 2 as an example, as it was already shown to be a good p-type TCO grown at low temperatures. We outline a modified figure of merit reducing thickness-dependent errors, as well as how modern ab initio screening methods can be used to augment experimental methods to assess new materials for potential applications as p-type TCOs, p-channel transparent thin film transistors, and selective contacts in solar cells.