Epitaxial lift-off of electrodeposited single-crystal gold foils for flexible electronics

We introduce a simple and inexpensive procedure for epitaxial lift-off of wafer-size flexible and transparent foils of single-crystal gold using silicon as a template. Lateral electrochemical undergrowth of a sacrificial SiOₓ layer was achieved by photoelectrochemically oxidizing silicon under light...

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Bibliographic Details
Published inScience (American Association for the Advancement of Science) Vol. 355; no. 6330; pp. 1203 - 1206
Main Authors Mahenderkar, Naveen K, Chen, Qingzhi, Liu, Ying-Chau, Duchild, Alexander R, Hofheins, Seth, Chason, Eric, Switzer, Jay A
Format Journal Article
LanguageEnglish
Published United States American Association for the Advancement of Science 17.03.2017
The American Association for the Advancement of Science
American Association for the Advancement of Science (AAAS)
Subjects
Bending
Copper oxides
Diodes
Electrochemistry
Epitaxy
Flexibility
Flexible components
Foils
Gold
Irradiation
Light irradiation
Metal foils
Nanotechnology
Nanowires
Organic light emitting diodes
Oxidation
Photoelectrochemistry
Ruthenium
Ruthenium compounds
Semiconductors
Silicon
Silicon dioxide
Single crystals
Spin coating
Substrates
Undergrowth
Zinc oxide
Zinc oxides
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Summary:We introduce a simple and inexpensive procedure for epitaxial lift-off of wafer-size flexible and transparent foils of single-crystal gold using silicon as a template. Lateral electrochemical undergrowth of a sacrificial SiOₓ layer was achieved by photoelectrochemically oxidizing silicon under light irradiation. A 28-nanometer-thick gold foil with a sheet resistance of 7 ohms per square showed only a 4% increase in resistance after 4000 bending cycles. A flexible organic light-emitting diode based on tris(bipyridyl)ruthenium(II) that was spin-coated on a foil exploited the transmittance and flexibility of the gold foil. Cuprous oxide as an inorganic semiconductor that was epitaxially electrodeposited onto the gold foils exhibited a diode quality factor n of 1.6 (where n = 1.0 for an ideal diode), compared with a value of 3.1 for a polycrystalline deposit. Zinc oxide nanowires electrodeposited epitaxially on a gold foil also showed flexibility, with the nanowires intact up to 500 bending cycles.
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USDOE
FG02-08ER46518; SC0008799
ISSN:0036-8075
1095-9203
DOI:10.1126/science.aam5830