Nonvolatile Analog Memory Transistor Based on Carbon Nanotubes and C60 Molecules

• Published in: Small (Weinheim an der Bergstrasse, Germany) Vol. 9; no. 13; pp. 2283 - 2287
• Main Authors: Cho, Byungjin, Kim, Kyunghyun, Chen, Chia-Ling, Shen, Alex Ming, Truong, Quyen, Chen, Yong
• Format: Journal Article
• Language: English
• Published: Weinheim WILEY-VCH Verlag 08.07.2013; WILEY‐VCH Verlag; Wiley Subscription Services, Inc
• Subjects: analog memory; Buckminsterfullerene; C60; Carbon nanotubes; Channels; Charge; Fullerenes; Gates; Nanotechnology; Nanotubes; nonvolatile memory; Semiconductor devices; Transistors; carbon nanotubes; C60; analog memory; transistors; nonvolatile memory
• ISSN: 1613-6810; 1613-6829
• DOI: 10.1002/smll.201202593

A nonvolatile analog memory transistor is demonstrated by integrating C60 molecules as charge storage molecules in the transistor gate, and carbon nanotubes (CNTs) in the transistor channel. The currents through the CNT channel can be tuned quantitatively and reversibly to analog values by controlling the number of electrons trapped in the C60 molecules. After tuning, the electrons trapped in the C60 molecules in the gate, and the current through the CNT channel, can be preserved in a nonvolatile manner, indicating the characteristics of the nonvolatile analog memory. A nonvolatile analog memory transistor is demonstrated by integrating C60 molecules as charge storage molecules in the transistor gate, and carbon nanotubes (CNTs) as the transistor channel. The currents through the CNT channel can be tuned quantitatively and then preserved to analog values by controlling the number of electrons trapped in the C60 molecules.