Vertically tapered epilayers for low-loss waveguide-fiber coupling achieved in a single epitaxial growth run
Next-generation optical-communications systems require on-wafer integration of active and passive opto-electronic components to increase operating speed and reduce packaging costs. Increased coupling efficiencies between semiconductor waveguides and optical fibers are of particular interest. A simpl...
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Published in | Journal of lightwave technology Vol. 21; no. 1; pp. 211 - 217 |
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Main Authors | , , , , , , , , |
Format | Journal Article |
Language | English |
Published |
New York, NY
IEEE
01.01.2003
Institute of Electrical and Electronics Engineers The Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
Subjects | |
Online Access | Get full text |
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Summary: | Next-generation optical-communications systems require on-wafer integration of active and passive opto-electronic components to increase operating speed and reduce packaging costs. Increased coupling efficiencies between semiconductor waveguides and optical fibers are of particular interest. A simple and cost-effective method of fabricating a mode-size converter monolithically integrated with a semiconductor waveguide is presented. An on-wafer mode-size converter reduces the number of interfaces in an opto-electronic circuit and improves the coupling efficiency between semiconductor waveguide and optical fiber. Vertically tapered epilayers are deposited in a single epitaxial growth run using shadow-masked growth by chemical-beam epitaxy, avoiding complex and expensive processing and regrowth stages. Waveguides that taper vertically and horizontally over /spl sim/1 mm for gradual expansion of the mode size are demonstrated. Waveguide loss measurements showed that there was negligible loss across the tapered regions. A loss of <2 dB/interface was achieved compared with /spl sim/8 dB/interface for a butt-coupled discrete device. |
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Bibliography: | ObjectType-Article-2 SourceType-Scholarly Journals-1 ObjectType-Feature-1 content type line 23 |
ISSN: | 0733-8724 1558-2213 |
DOI: | 10.1109/JLT.2003.808672 |