An Effective Modeling Framework for the Analysis of Interconnects Subject to Line-Edge Roughness

This letter proposes a complete and efficient simulation framework to assess the effects of line-edge roughness appearing in on-chip lines. The modeling approach consists of three steps. First, a stochastic macromodel is created for the per-unit-length RLGC parameters of the line. Secondly, random c...

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Bibliographic Details
Published inIEEE microwave and wireless components letters Vol. 25; no. 8; pp. 502 - 504
Main Authors Manfredi, Paolo, Vande Ginste, Dries, De Zutter, Daniel
Format Journal Article
LanguageEnglish
Published IEEE 01.08.2015
Subjects
Capacitance
Conductors
Correlation
Line-edge roughness (LER)
Mathematical models
Microstrip lines
Microwaves
Nonuniform
nonuniform transmission lines
on-chip interconnects
Perturbation methods
Roughness
Splines
Splines (mathematics)
Stochastic processes
Stochasticity
System-on-chip
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Summary:This letter proposes a complete and efficient simulation framework to assess the effects of line-edge roughness appearing in on-chip lines. The modeling approach consists of three steps. First, a stochastic macromodel is created for the per-unit-length RLGC parameters of the line. Secondly, random conductor edge profiles are generated using randomized splines. These are combined with the stochastic macromodel to readily provide place-dependent RLGC parameters. Finally, the resulting nonuniform transmission line is analyzed by means of a fast and accurate perturbation technique. To validate the proposed approach, a statistical analysis of the response of a coupled inverted embedded microstrip line is carried out for different roughness parameters.
Bibliography:ObjectType-Article-1
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ISSN:1531-1309
1558-1764
DOI:10.1109/LMWC.2015.2440776