Advanced In Situ TEM Microchip with Excellent Temperature Uniformity and High Spatial Resolution

Transmission electron microscopy (TEM) is a highly effective method for scientific research, providing comprehensive analysis and characterization. However, traditional TEM is limited to observing static material structures at room temperature within a high-vacuum environment. To address this limita...

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Published inSensors (Basel, Switzerland) Vol. 23; no. 9; p. 4470
Main Authors Zhang, Xuelin, Zhou, Yufan, Chen, Ying, Li, Ming, Yu, Haitao, Li, Xinxin
Format Journal Article
LanguageEnglish
Published Switzerland MDPI AG 04.05.2023
MDPI
Subjects
Accuracy
Chemical reactions
Design
Experiments
gas cell
Gases
Heat
in situ TEM
Integrated circuits
MEMS
microchip
Nanoparticles
Researchers
Scientists
Semiconductor chips
Semiconductors
Silicon nitride
Temperature
temperature uniformity
Wire
temperature uniformity
MEMS
microchip
gas cell
in situ TEM
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Summary:Transmission electron microscopy (TEM) is a highly effective method for scientific research, providing comprehensive analysis and characterization. However, traditional TEM is limited to observing static material structures at room temperature within a high-vacuum environment. To address this limitation, a microchip was developed for in situ TEM characterization, enabling the real-time study of material structure evolution and chemical process mechanisms. This microchip, based on microelectromechanical System (MEMS) technology, is capable of introducing multi-physics stimulation and can be used in conjunction with TEM to investigate the dynamic changes of matter in gas and high-temperature environments. The microchip design ensures a high-temperature uniformity in the sample observation area, and a system of tests was established to verify its performance. Results show that the temperature uniformity of 10 real-time observation windows with a total area of up to 1130 μm2 exceeded 95%, and the spatial resolution reached the lattice level, even in a flowing atmosphere of 1 bar.
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ISSN:1424-8220
1424-8220
DOI:10.3390/s23094470