Near-IR & Mid-IR Silicon Photonics Modulators

• Published in: Sensors (Basel, Switzerland) Vol. 22; no. 24; p. 9620
• Main Authors: Georgiev, Georgi V, Cao, Wei, Zhang, Weiwei, Ke, Li, Thomson, David J, Reed, Graham T, Nedeljkovic, Milos, Mashanovich, Goran Z
• Format: Journal Article
• Language: English
• Published: Switzerland MDPI AG 08.12.2022; MDPI
• Subjects: Bandwidths; depletion; Efficiency; Energy consumption; Germanium; Innovations; modulators; Near infrared radiation; New technology; PAM-4; Photonics; Review; Semiconductors; Short wave radiation; Silicon; silicon photonics; depletion; germanium; modulators; silicon photonics; PAM-4
• ISSN: 1424-8220; 1424-8220
• DOI: 10.3390/s22249620

As the silicon photonics field matures and a data-hungry future looms ahead, new technologies are required to keep up pace with the increase in capacity demand. In this paper, we review current developments in the near-IR and mid-IR group IV photonic modulators that show promising performance. We analyse recent trends in optical and electrical co-integration of modulators and drivers enabling modulation data rates of 112 GBaud in the near infrared. We then describe new developments in short wave infrared spectrum modulators such as employing more spectrally efficient PAM-4 coding schemes for modulations up to 40 GBaud. Finally, we review recent results at the mid infrared spectrum and application of the thermo-optic effect for modulation as well as the emergence of new platforms based on germanium to tackle the challenges of modulating light in the long wave infrared spectrum up to 10.7 μm with data rates of 225 MBaud.