A lead-halide perovskite molecular ferroelectric semiconductor

Inorganic semiconductor ferroelectrics such as BiFeO 3 have shown great potential in photovoltaic and other applications. Currently, semiconducting properties and the corresponding application in optoelectronic devices of hybrid organo-plumbate or stannate are a hot topic of academic research; more...

Full description

Saved in:
Bibliographic Details
Published inNature communications Vol. 6; no. 1; p. 7338
Main Authors Liao, Wei-Qiang, Zhang, Yi, Hu, Chun-Li, Mao, Jiang-Gao, Ye, Heng-Yun, Li, Peng-Fei, Huang, Songping D., Xiong, Ren-Gen
Format Journal Article
LanguageEnglish
Published London Nature Publishing Group UK 29.05.2015
Nature Publishing Group
Nature Pub. Group
Subjects
Online AccessGet full text

Cover

Loading…
More Information
Summary:Inorganic semiconductor ferroelectrics such as BiFeO 3 have shown great potential in photovoltaic and other applications. Currently, semiconducting properties and the corresponding application in optoelectronic devices of hybrid organo-plumbate or stannate are a hot topic of academic research; more and more of such hybrids have been synthesized. Structurally, these hybrids are suitable for exploration of ferroelectricity. Therefore, the design of molecular ferroelectric semiconductors based on these hybrids provides a possibility to obtain new or high-performance semiconductor ferroelectrics. Here we investigated Pb-layered perovskites, and found the layer perovskite (benzylammonium) 2 PbCl 4 is ferroelectric with semiconducting behaviours. It has a larger ferroelectric spontaneous polarization P s =13 μC cm −2 and a higher Curie temperature T c =438 K with a band gap of 3.65 eV. This finding throws light on the new properties of the hybrid organo-plumbate or stannate compounds and provides a new way to develop new semiconductor ferroelectrics. Lead-halide perovskite compounds have seen a considerable interest for their optoelectronic properties. Here, the authors discover a ferroelectric halide perovskite compound as an alternative pathway towards designing semiconductor ferroelectrics.
Bibliography:ObjectType-Article-1
SourceType-Scholarly Journals-1
ObjectType-Feature-2
content type line 14
content type line 23
These authors contributed equally to this work.
ISSN:2041-1723
2041-1723
DOI:10.1038/ncomms8338